Method for data processing in application to ohmic contacts
The method of processing the data of electrophysical investigations of ohmic contacts has been developed. It allows obtaining more accurate results of measuring the contact resistance and additional information by analyzing the statistical and spatial distribution of input data. To test the method,...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2019 |
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215433 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Method for data processing in application to ohmic contacts / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, V.M. Kovtonjuk, Ya.Ya. Kudryk, V.V. Shynkarenko, M.M. Dub, P.O. Saj, S.V. Novitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 11-18. — Бібліогр.: 11 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862742727165214720 |
|---|---|
| author | Belyaev, A.E. Boltovets, N.S. Konakova, R.V. Kovtonjuk, V.M. Kudryk, Ya.Ya. Shynkarenko, V.V. Dub, M.M. Saj, P.O. Novitskii, S.V. |
| author_facet | Belyaev, A.E. Boltovets, N.S. Konakova, R.V. Kovtonjuk, V.M. Kudryk, Ya.Ya. Shynkarenko, V.V. Dub, M.M. Saj, P.O. Novitskii, S.V. |
| citation_txt | Method for data processing in application to ohmic contacts / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, V.M. Kovtonjuk, Ya.Ya. Kudryk, V.V. Shynkarenko, M.M. Dub, P.O. Saj, S.V. Novitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 11-18. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The method of processing the data of electrophysical investigations of ohmic contacts has been developed. It allows obtaining more accurate results of measuring the contact resistance and additional information by analyzing the statistical and spatial distribution of input data. To test the method, the Au–Ge–TiB₂–Au contact to n-n⁺-GaAs was used. The analysis of frequency distribution for the total resistance, specific contact resistance, and surface resistance of the semiconductor has been carried out. The spatial distribution of these parameters has been analyzed. By taking the linear gradient of specific resistivity into account, the value of the contact resistance has been clarified. We have achieved a reduction of half-width of the distribution by 14%, that is, a reduction of the error in determining the contact resistance. The method has been developed for correctly analyzing the impacts of technological treatments and degradation processes and has been oriented towards research purposes. Evaluation of the gradient distributions of the contact resistance and the resistance of the semiconductor can be used to identify the defects in the technological processes of manufacturing devices.
|
| first_indexed | 2026-03-23T19:02:29Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215433 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T19:02:29Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Belyaev, A.E. Boltovets, N.S. Konakova, R.V. Kovtonjuk, V.M. Kudryk, Ya.Ya. Shynkarenko, V.V. Dub, M.M. Saj, P.O. Novitskii, S.V. 2026-03-16T11:01:50Z 2019 Method for data processing in application to ohmic contacts / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, V.M. Kovtonjuk, Ya.Ya. Kudryk, V.V. Shynkarenko, M.M. Dub, P.O. Saj, S.V. Novitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 11-18. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 73.40.Ns, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/215433 https://doi.org/10.15407/spqeo22.01.11 The method of processing the data of electrophysical investigations of ohmic contacts has been developed. It allows obtaining more accurate results of measuring the contact resistance and additional information by analyzing the statistical and spatial distribution of input data. To test the method, the Au–Ge–TiB₂–Au contact to n-n⁺-GaAs was used. The analysis of frequency distribution for the total resistance, specific contact resistance, and surface resistance of the semiconductor has been carried out. The spatial distribution of these parameters has been analyzed. By taking the linear gradient of specific resistivity into account, the value of the contact resistance has been clarified. We have achieved a reduction of half-width of the distribution by 14%, that is, a reduction of the error in determining the contact resistance. The method has been developed for correctly analyzing the impacts of technological treatments and degradation processes and has been oriented towards research purposes. Evaluation of the gradient distributions of the contact resistance and the resistance of the semiconductor can be used to identify the defects in the technological processes of manufacturing devices. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics Method for data processing in application to ohmic contacts Article published earlier |
| spellingShingle | Method for data processing in application to ohmic contacts Belyaev, A.E. Boltovets, N.S. Konakova, R.V. Kovtonjuk, V.M. Kudryk, Ya.Ya. Shynkarenko, V.V. Dub, M.M. Saj, P.O. Novitskii, S.V. Semiconductor physics |
| title | Method for data processing in application to ohmic contacts |
| title_full | Method for data processing in application to ohmic contacts |
| title_fullStr | Method for data processing in application to ohmic contacts |
| title_full_unstemmed | Method for data processing in application to ohmic contacts |
| title_short | Method for data processing in application to ohmic contacts |
| title_sort | method for data processing in application to ohmic contacts |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215433 |
| work_keys_str_mv | AT belyaevae methodfordataprocessinginapplicationtoohmiccontacts AT boltovetsns methodfordataprocessinginapplicationtoohmiccontacts AT konakovarv methodfordataprocessinginapplicationtoohmiccontacts AT kovtonjukvm methodfordataprocessinginapplicationtoohmiccontacts AT kudrykyaya methodfordataprocessinginapplicationtoohmiccontacts AT shynkarenkovv methodfordataprocessinginapplicationtoohmiccontacts AT dubmm methodfordataprocessinginapplicationtoohmiccontacts AT sajpo methodfordataprocessinginapplicationtoohmiccontacts AT novitskiisv methodfordataprocessinginapplicationtoohmiccontacts |