Method for data processing in application to ohmic contacts
The method of processing the data of electrophysical investigations of ohmic contacts has been developed. It allows obtaining more accurate results of measuring the contact resistance and additional information by analyzing the statistical and spatial distribution of input data. To test the method,...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2019 |
| Main Authors: | Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kovtonjuk, V.M., Kudryk, Ya.Ya., Shynkarenko, V.V., Dub, M.M., Saj, P.O., Novitskii, S.V. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
|
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215433 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Method for data processing in application to ohmic contacts / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, V.M. Kovtonjuk, Ya.Ya. Kudryk, V.V. Shynkarenko, M.M. Dub, P.O. Saj, S.V. Novitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 11-18. — Бібліогр.: 11 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineSimilar Items
Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
by: Kudryk, Ya.Ya., et al.
Published: (2019)
by: Kudryk, Ya.Ya., et al.
Published: (2019)
Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review)
by: Sachenko, A.V., et al.
Published: (2018)
by: Sachenko, A.V., et al.
Published: (2018)
Method for data processing in application to ohmic contacts
by: A. E. Belyaev, et al.
Published: (2019)
by: A. E. Belyaev, et al.
Published: (2019)
Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes
by: Romanets, P.M., et al.
Published: (2019)
by: Romanets, P.M., et al.
Published: (2019)
Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010)
by: Belyaev, A.E., et al.
Published: (2010)
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: Boltovets, M.S., et al.
Published: (2010)
by: Boltovets, M.S., et al.
Published: (2010)
Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
by: Belyaev, A.E., et al.
Published: (2008)
by: Belyaev, A.E., et al.
Published: (2008)
Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: Belyaev, A.E., et al.
Published: (2015)
by: Belyaev, A.E., et al.
Published: (2015)
Role of dislocations in formation of ohmic contacts to heavily doped n-Si
by: Belyaev, A.E., et al.
Published: (2013)
by: Belyaev, A.E., et al.
Published: (2013)
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
by: Boltovets, N.S., et al.
Published: (2006)
by: Boltovets, N.S., et al.
Published: (2006)
The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010)
by: Belyaev, A.E., et al.
Published: (2010)
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: M. S. Boltovets, et al.
Published: (2010)
by: M. S. Boltovets, et al.
Published: (2010)
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
by: Romanets, P.M., et al.
Published: (2016)
by: Romanets, P.M., et al.
Published: (2016)
Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts
by: A. E. Belyaev, et al.
Published: (2010)
by: A. E. Belyaev, et al.
Published: (2010)
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step
by: Sachenko, A.V., et al.
Published: (2014)
by: Sachenko, A.V., et al.
Published: (2014)
Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
by: Belyaev, A.E., et al.
Published: (2015)
by: Belyaev, A.E., et al.
Published: (2015)
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: Belyaev, A.E., et al.
Published: (2013)
by: Belyaev, A.E., et al.
Published: (2013)
Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: A. E. Belyaev, et al.
Published: (2015)
by: A. E. Belyaev, et al.
Published: (2015)
Methods for creation and properties of ohmic contacts to indium phosphide (rewiev)
by: Ya. Ya. Kudryk
Published: (2015)
by: Ya. Ya. Kudryk
Published: (2015)
The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts
by: A. E. Belyaev, et al.
Published: (2010)
by: A. E. Belyaev, et al.
Published: (2010)
Physical mechanisms providing formation of ohmic contacts metal-semiconductor (Review)
by: A. V. Sachenko, et al.
Published: (2018)
by: A. V. Sachenko, et al.
Published: (2018)
Mechanisms of contact resistance formation in ohmic contacts with high dislocation density (review)
by: A. V. Sachenko, et al.
Published: (2013)
by: A. V. Sachenko, et al.
Published: (2013)
Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
by: Belyaev, A.E., et al.
Published: (2011)
by: Belyaev, A.E., et al.
Published: (2011)
Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
by: Ya. Ya. Kudryk, et al.
Published: (2019)
by: Ya. Ya. Kudryk, et al.
Published: (2019)
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step
by: A. V. Sachenko, et al.
Published: (2014)
by: A. V. Sachenko, et al.
Published: (2014)
Ohmic contacts to InN-based materials
by: Sai, P.O.
Published: (2016)
by: Sai, P.O.
Published: (2016)
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
by: Sachenko, A.V., et al.
Published: (2013)
by: Sachenko, A.V., et al.
Published: (2013)
Role of dislocations in formation of ohmic contacts to heavily doped n-Si
by: A. E. Belyaev, et al.
Published: (2013)
by: A. E. Belyaev, et al.
Published: (2013)
Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP
by: A. E. Belyaev, et al.
Published: (2015)
by: A. E. Belyaev, et al.
Published: (2015)
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
by: Ivanov, V.N., et al.
Published: (2003)
by: Ivanov, V.N., et al.
Published: (2003)
New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
by: Arsentyev, I.N., et al.
Published: (2005)
by: Arsentyev, I.N., et al.
Published: (2005)
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)
by: P. O. Sai, et al.
Published: (2019)
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)
by: P. O. Sai, et al.
Published: (2019)
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors
by: Slipokurov, V.S., et al.
Published: (2015)
by: Slipokurov, V.S., et al.
Published: (2015)
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors
by: Slipokurov, V.S., et al.
Published: (2015)
by: Slipokurov, V.S., et al.
Published: (2015)
Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures
by: Konakova, R.V., et al.
Published: (2002)
by: Konakova, R.V., et al.
Published: (2002)
Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: Vinoslavskii, M.M., et al.
Published: (2018)
by: Vinoslavskii, M.M., et al.
Published: (2018)
Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates
by: Bacherikov, Yu.Yu., et al.
Published: (2018)
by: Bacherikov, Yu.Yu., et al.
Published: (2018)
Effect of microwave radiation on I V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: A. E. Belyaev, et al.
Published: (2013)
by: A. E. Belyaev, et al.
Published: (2013)
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes
by: P. M. Romanets, et al.
Published: (2016)
by: P. M. Romanets, et al.
Published: (2016)
Similar Items
-
Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
by: Kudryk, Ya.Ya., et al.
Published: (2019) -
Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review)
by: Sachenko, A.V., et al.
Published: (2018) -
Method for data processing in application to ohmic contacts
by: A. E. Belyaev, et al.
Published: (2019) -
Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes
by: Romanets, P.M., et al.
Published: (2019) -
Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010)