Title pages and contents
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2019 |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215435 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Title pages and contents // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860480578660335616 |
|---|---|
| citation_txt | Title pages and contents // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| first_indexed | 2026-03-23T19:02:24Z |
| format | Article |
| fulltext |
International Scientific Journal
Semiconductor Physics
Quantum Electronics &
Optoelectronics
Volume 22, N 1
2019
Registered by the Ministry of Justice of Ukraine. Certificate KB #23200-13040.
Published since 1998. ISSN 1560-8034 ISSN 1605-6582 (On-line)
SPQEO has been selected for coverage in Clarivate Analytics products and services since 2018 Volume 21 №1.
SPQEO has been accepted for coverage in selected Elsevier products starting with 2019 volume 22 № 1.
National Academy of Sciences of Ukraine
V. Lashkaryov Institute of Semiconductor Physics
© V. Lashkaryov Institute of Semiconductor Physics
National Academy of Sciences of Ukraine
Web: www.journal-spqeo.org.ua
Editorial Board Address:
41, prospect Nauky, 03680 Kyiv, Ukraine
Phone: +380 (44) 525 6497; Fax: +380 (44) 525 8342
E-mail: journal@journal-spqeo.org.ua
E-mail: journal@isp.kiev.ua
EDITORIAL BOARD
EDITOR-IN-CHIEF
A.E. Belyaev V. Lashkaryov Institute of Semiconductor Physics (ISP), National Academy of Sciences of Ukraine (NASU), Kyiv
DEPUTY EDITORS-IN-CHIEF
V.P. Kladko V. Lashkaryov Institute of Semiconductor Physics (ISP), NASU, Kyiv, Ukraine
V.A. Kochelap V. Lashkaryov Institute of Semiconductor Physics (ISP), NASU, Kyiv, Ukraine
M.V. Strikha V. Lashkaryov Institute of Semiconductor Physics (ISP), NASU, Kyiv, Ukraine
INTERNATIONAL ADVISORY COUNCIL
S. Asmontas Semiconductor Physics Institute, Vilnius,
Lithuania
M.S. Brodyn Institute of Physics, NASU, Kyiv,
Ukraine
M.L. Calvo Complutense University of Madrid,
Spain
D. Flandre Institute of Information and
Communication Technologies, Louvain-
la-Neuve, Belgium
F.J. Gamiz Perez University of Granada, Spain
S.V. Gaponenko B. Stepanov Institute of Physics,
National Academy of Science of Belarus,
Minsk, Belarus
I. Grzegory Institute of High Pressure, Poland
W. Knap CNRS, France, Poland
Z.F. Krasilnik Institute for Physics of Microstructures,
RAS, Russia
A.P. Litvinchuk University of Houston, USA
St. Lucyszyn Imperial College London, United
Kingdom
H. Lüth Institute of Semiconductor
Nanoelectronics, Julich, Germany
A. Medvids Riga Technical University, Latvia
J.R. Morante Institute of Renewable Energy Catalonia,
Barcelona, Spain
G. Salamo University of Arkanzas, USA
M.S. Soskin Institute of Physics, NASU, Ukraine
D.R.T. Zahn Chemnitz University of Technology,
Germany
EDITORIAL BOARD MEMBERS
I.V. Blonskii Institute of Physics, NASU, Kyiv, Ukraine
I.M. Dmytruk T.G. Shevchenko National University,
Kyiv, Ukraine
V.I. Grygoruk T.G. Shevchenko National University,
Kyiv, Ukraine
L.S. Homenkova V. Lashkaryov ISP, NASU, Kyiv, Ukraine
I.Z. Indutnyy V. Lashkaryov ISP, NASU, Kyiv, Ukraine
R.V. Konakova V. Lashkaryov ISP, NASU, Kyiv, Ukraine
V.G. Lytovchenko V.Lashkaryov ISP, NASU, Kyiv, Ukraine
V.S. Lysenko V. Lashkaryov ISP, NASU, Kyiv, Ukraine
A.M. Morozovska Institute of Physics, NASU, Kyiv, Ukraine
A.G. Naumovets Institute of Physics, NASU, Kyiv, Ukraine
A.I. Nosich Institute for Radiophysics and Radio-
electronics, NASU, Kharkiv, Ukraine
P.F. Oleksenko V. Lashkaryov ISP, NASU, Kyiv, Ukraine
V.V. Petrov Institute for Information Recording,
NASU, Kyiv, Ukraine
V.M. Poroshin Institute of Physics, NASU, Kyiv, Ukraine
I.V. Prokopenko V. Lashkaryov ISP, NASU, Kyiv, Ukraine
O.G. Sarbei Institute of Physics, NASU, Kyiv, Ukraine
F.F. Sizov V. Lashkaryov ISP, NASU, Kyiv, Ukraine
V.M. Sorokin V. Lashkaryov ISP, NASU, Kyiv, Ukraine
V.I. Sugakov Institute of Nuclear Recearch, NASU,
Kyiv, Ukraine
P.M. Tomchuk Institute of Physics, NASU, Kyiv, Ukraine
M.Ya. Valakh V. Lashkaryov ISP, NASU, Kyiv, Ukraine
O.I. Vlasenko V. Lashkaryov ISP, NASU, Kyiv, Ukraine
Yu.I. Yakimenko National Technical University «KPI»,
Kyiv, Ukraine
V.M. Yakovenko Institute for Radiophysics and Radio-
electronics, NASU, Kharkiv, Ukraine
SENIOR EXECUTIVE EDITOR
P.S. Smertenko V. Lashkaryov Institute of Semiconductor Physics (ISP), NASU, Kyiv, Ukraine
EXECUTIVE SECRETARY
A.A. Kudryavtsev V. Lashkaryov Institute of Semiconductor Physics (ISP), NASU, Kyiv, Ukraine
Semiconductor Physics, Quantum Electronics & Optoelectronics
Due to kindly assistance of EBSCO PUBLISHING (Ipswich, Massachusetts, 01938-0682, USA),
all the materials published in the journal Semiconductor Physics, Quantum Electronics and
Optoelectronics starting from the Volume 6, # 4, 2003 are represented
in 32 Data Bases.
ISSN 1560-8034, 1605-6582 (On-line), SPQEO, 2019. V. 22, N 1. P. 3.
3
Content
Editorial 4
Semiconductor physics
Electronic, structural and paramagnetic
properties of magnesium telluride
J.O. Akinlami, M.O. Omeike and A.J. Akindiilete
5-10
Method for data processing in application
to ohmic contacts
A.E. Belyaev, N.S. Boltovets, R.V. Konakova,
V.M. Kovtonjuk, Ya.Ya. Kudryk, V.V. Shynkaren-
ko, M.M. Dub, P.O. Saj, S.V. Novitskii 11-18
Combination of thermionic emission and
tunneling mechanisms to analyze the leakage
current in 4H-SiC Schottky barrier diodes
A. Latreche 19-25
Synthesis and characterization of new
potassium-containing argyrodite-type
compounds
I.P. Studenyak, A.I. Pogodin, V.I. Studenyak,
O.P Kokhan, Yu.M. Azhniuk, C. Cserháti,
S. Kökényesi, D.R.T. Zahn 26-33
Peculiarities of study of Au–Ti–Pd–n
+
-n-n
+
-Si
multilayer contact structure to avalanche
transit-time diodes
P.M. Romanets, R.V. Konakova, M.S. Boltovets,
V.V. Basanets, Ya.Ya. Kudryk, V.S. Slipokurov
34-38
Transformation of structural defects in
semiconductors under action of
electromagnetic and magnetic fields
causing resonant phenomena
G.V. Milenin, R.A. Red'ko 39-46
Mechanical properties of Cu6PS5І superionic
crystals and thin films
V.V. Bilanych, А.V. Bendak, K.V. Skubenych,
F. Lofaj, I.P. Studenyak, V.S. Bilanych, V.M. Rizak
47-52
Hetero- and low-dimensional
structures
Tuned aggregation and film self-assembly
of monomethincyanine dyes through variation
of their monomer structure
M.M. Sieryk, O.P. Dimitriev 53-59
Optics
Effect of L-arginine phosphate doping on
structural, optical and strength properties of
KDP single crystal
E.I. Kostenyukova, I.M. Pritula,
O.N. Bezkrovnaya, N.O. Kovalenko,
A.G. Doroshenko, S.V. Khimchenko,
A.G. Fedorov 60-66
Optoelectronics and
optoelectronic devices
Brief history of THz and IR technologies
F.F. Sizov 67-79
Photoconverter with luminescent
concentator. Matrix material
M.R. Kulish, V.P. Kostulyov, A.V. Sachenko,
I.O. Sokolovskyi, A.I. Shkrebtii 80-87
Photodetector device for fiber optical
telecommunication systems
N.O. Andreyeva, V.O. Zuyev, S.V. Morozova,
R.A. Red'ko 88-91
Influence of boron doping on the
photosensitivity of cubic silicon carbide
V.N. Rodionov, V.Ya. Bratus', S.O. Voronov 92-97
Sensors
Reduced graphene oxide obtained using the
spray pyrolysis technique for gas sensing
O.M. Slobodian, Yu.S. Milovanov,
V.A. Skryshevsky, A.V. Vasin, X. Tang,
J.-P. Raskin, P.M. Lytvyn, K.V. Svezhentsova,
S.V. Malyuta, A.N. Nazarov 98-103
Quantum efficiency improvement of optical
radiation trap-detectors
D.N. Tatyanko, P.I. Neyezhmakov,
Ye.P. Timofeev, A.S. Litvinenko,
K.I. Suvorova, O.M. Didenko 104-110
Diagnostics of cattle leucosis by using
a biosensor based on surface plasmon
resonance phenomenon
Z.S. Klestova, A.Yu. Yuschenko, Yu.Yu.
Dremukh, O.F. Blotska, E.F. Venger,
G.V. Dorozynsky, S.O. Kravchenko,
Yu.V. Ushenin, N.V. Kachur, V.P. Maslov
111-118
Effect of ion implantation on structural
damage in compositionally graded AlGaN
layers
O.I. Liubchenko, V.P. Kladko, H.V. Stanchu,
T.M. Sabov, V.P. Melnik, S.B. Kryvyi,
A.E. Belyaev 119-129
Lectures, Presentations
(For subsribers only)
Introduction to nanoelectronics and
optoelectronics
V.O. Kochelap 130
Personality
M.S. Soskin, to 90th anniversary
M.V. Vasnetsov, Editorial Board of SPQEO
131-132
Information
For contributors to SPQEO 133-134
|
| id | nasplib_isofts_kiev_ua-123456789-215435 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T19:02:24Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | 2026-03-16T11:02:39Z 2019 Title pages and contents // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — англ. 1560-8034 https://nasplib.isofts.kiev.ua/handle/123456789/215435 en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Title pages and contents Article published earlier |
| spellingShingle | Title pages and contents |
| title | Title pages and contents |
| title_full | Title pages and contents |
| title_fullStr | Title pages and contents |
| title_full_unstemmed | Title pages and contents |
| title_short | Title pages and contents |
| title_sort | title pages and contents |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215435 |