Formation of nanocrystals and their properties during tin-induced and laser light-stimulated crystallization of amorphous silicon

• Дата: 2019
• Автори: Neimash, V.B., Nikolenko, A.S., Strelchuk, V.V., Shepeliavyi, P.Ye., Litvinchuk, P.M., Melnyk, V.V., Olhovik, I.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Теми: Hetero- and Low-Dimensional Structures
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/215463
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Formation of nanocrystals and their properties during tin-induced and laser light stimulated crystallization of amorphous silicon / V.B. Neimash, A.S. Nikolenko, V.V. Strelchuk, P.Ye. Shepeliavyi, P.M. Litvinchuk, V.V. Melnyk, I.V. Olhovik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 206-214. — Бібліогр.: 30 назв. — англ.

The effect of laser light intensity and temperature on the induced tin crystallization of amorphous silicon has been investigated using the methods of Raman scattering and optical microscopy. The existence of non-thermal mechanisms of the laser light influence on the formation of silicon nanocrystals and their Raman spectra has been experimentally demonstrated. Photoionization of silicon and electron-phonon interaction are considered as possible reasons for the detected effects. The prospects of their application in new technologies, providing production of nano-silicon films for solar cells, have been discussed.