Formation of nanocrystals and their properties during tin-induced and laser light-stimulated crystallization of amorphous silicon
The effect of laser light intensity and temperature on the induced tin crystallization of amorphous silicon has been investigated using the methods of Raman scattering and optical microscopy. The existence of non-thermal mechanisms of the laser light influence on the formation of silicon nanocrystal...
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| Date: | 2019 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215463 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Formation of nanocrystals and their properties during tin-induced and laser light stimulated crystallization of amorphous silicon / V.B. Neimash, A.S. Nikolenko, V.V. Strelchuk, P.Ye. Shepeliavyi, P.M. Litvinchuk, V.V. Melnyk, I.V. Olhovik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 206-214. — Бібліогр.: 30 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862726149514199040 |
|---|---|
| author | Neimash, V.B. Nikolenko, A.S. Strelchuk, V.V. Shepeliavyi, P.Ye. Litvinchuk, P.M. Melnyk, V.V. Olhovik, I.V. |
| author_facet | Neimash, V.B. Nikolenko, A.S. Strelchuk, V.V. Shepeliavyi, P.Ye. Litvinchuk, P.M. Melnyk, V.V. Olhovik, I.V. |
| citation_txt | Formation of nanocrystals and their properties during tin-induced and laser light stimulated crystallization of amorphous silicon / V.B. Neimash, A.S. Nikolenko, V.V. Strelchuk, P.Ye. Shepeliavyi, P.M. Litvinchuk, V.V. Melnyk, I.V. Olhovik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 206-214. — Бібліогр.: 30 назв. — англ. |
| collection | DSpace DC |
| description | The effect of laser light intensity and temperature on the induced tin crystallization of amorphous silicon has been investigated using the methods of Raman scattering and optical microscopy. The existence of non-thermal mechanisms of the laser light influence on the formation of silicon nanocrystals and their Raman spectra has been experimentally demonstrated. Photoionization of silicon and electron-phonon interaction are considered as possible reasons for the detected effects. The prospects of their application in new technologies, providing production of nano-silicon films for solar cells, have been discussed.
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| first_indexed | 2026-03-23T19:03:22Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215463 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T19:03:22Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Neimash, V.B. Nikolenko, A.S. Strelchuk, V.V. Shepeliavyi, P.Ye. Litvinchuk, P.M. Melnyk, V.V. Olhovik, I.V. 2026-03-18T11:38:48Z 2019 Formation of nanocrystals and their properties during tin-induced and laser light stimulated crystallization of amorphous silicon / V.B. Neimash, A.S. Nikolenko, V.V. Strelchuk, P.Ye. Shepeliavyi, P.M. Litvinchuk, V.V. Melnyk, I.V. Olhovik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 206-214. — Бібліогр.: 30 назв. — англ. 1560-8034 PACS: 63.22.Kn, 64.70.Nd, 64.70.dg https://nasplib.isofts.kiev.ua/handle/123456789/215463 https://doi.org/10.15407/spqeo22.02.206 The effect of laser light intensity and temperature on the induced tin crystallization of amorphous silicon has been investigated using the methods of Raman scattering and optical microscopy. The existence of non-thermal mechanisms of the laser light influence on the formation of silicon nanocrystals and their Raman spectra has been experimentally demonstrated. Photoionization of silicon and electron-phonon interaction are considered as possible reasons for the detected effects. The prospects of their application in new technologies, providing production of nano-silicon films for solar cells, have been discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Hetero- and Low-Dimensional Structures Formation of nanocrystals and their properties during tin-induced and laser light-stimulated crystallization of amorphous silicon Article published earlier |
| spellingShingle | Formation of nanocrystals and their properties during tin-induced and laser light-stimulated crystallization of amorphous silicon Neimash, V.B. Nikolenko, A.S. Strelchuk, V.V. Shepeliavyi, P.Ye. Litvinchuk, P.M. Melnyk, V.V. Olhovik, I.V. Hetero- and Low-Dimensional Structures |
| title | Formation of nanocrystals and their properties during tin-induced and laser light-stimulated crystallization of amorphous silicon |
| title_full | Formation of nanocrystals and their properties during tin-induced and laser light-stimulated crystallization of amorphous silicon |
| title_fullStr | Formation of nanocrystals and their properties during tin-induced and laser light-stimulated crystallization of amorphous silicon |
| title_full_unstemmed | Formation of nanocrystals and their properties during tin-induced and laser light-stimulated crystallization of amorphous silicon |
| title_short | Formation of nanocrystals and their properties during tin-induced and laser light-stimulated crystallization of amorphous silicon |
| title_sort | formation of nanocrystals and their properties during tin-induced and laser light-stimulated crystallization of amorphous silicon |
| topic | Hetero- and Low-Dimensional Structures |
| topic_facet | Hetero- and Low-Dimensional Structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215463 |
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