Formation of nanocrystals and their properties during tin-induced and laser light-stimulated crystallization of amorphous silicon
The effect of laser light intensity and temperature on the induced tin crystallization of amorphous silicon has been investigated using the methods of Raman scattering and optical microscopy. The existence of non-thermal mechanisms of the laser light influence on the formation of silicon nanocrystal...
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| Date: | 2019 |
|---|---|
| Main Authors: | Neimash, V.B., Nikolenko, A.S., Strelchuk, V.V., Shepeliavyi, P.Ye., Litvinchuk, P.M., Melnyk, V.V., Olhovik, I.V. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
|
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215463 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Formation of nanocrystals and their properties during tin-induced and laser light stimulated crystallization of amorphous silicon / V.B. Neimash, A.S. Nikolenko, V.V. Strelchuk, P.Ye. Shepeliavyi, P.M. Litvinchuk, V.V. Melnyk, I.V. Olhovik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 206-214. — Бібліогр.: 30 назв. — англ. |
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