Electrostatics of the nanowire radial -- diode

• Дата: 2019
• Автор: Borblik, V.L.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Теми: Hetero- and Low-Dimensional Structures
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/215464
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Electrostatics of the nanowire radial -- diode / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 201-205. — Бібліогр.: 16 назв. — англ.

In this paper, the electrostatic theory of the nanowire radial core-shell -- homojunction has been considered. The calculations carried out show that, in contrast to a planar -- diode, the built-in electric field of the nanowire radial -- diode proves to be inhomogeneous. This field reaches its maximum in the region of the i-layer adjoining the core. When moving away the i-layer from the nanowire center, the degree of field inhomogeneity decays, and both edge values of the field in the i-layer eventually reach the magnitude, which takes place in an analogous planar -- diode. This magnitude can be both higher and lower than the maximal field in the nanowire -- diode (depending on doping conditions). Simultaneously, the capacitance of the nanowire p-i-n diode can both increase and decrease in its value, going, at the same time, to weak voltage dependence inherent to the planar -- diode.