Electrostatics of the nanowire radial -- diode
In this paper, the electrostatic theory of the nanowire radial core-shell -- homojunction has been considered. The calculations carried out show that, in contrast to a planar -- diode, the built-in electric field of the nanowire radial -- diode proves to be inhomogeneous. This field reaches its maxi...
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| Datum: | 2019 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electrostatics of the nanowire radial -- diode / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 201-205. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862578448016343040 |
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| author | Borblik, V.L. |
| author_facet | Borblik, V.L. |
| citation_txt | Electrostatics of the nanowire radial -- diode / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 201-205. — Бібліогр.: 16 назв. — англ. |
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| description | In this paper, the electrostatic theory of the nanowire radial core-shell -- homojunction has been considered. The calculations carried out show that, in contrast to a planar -- diode, the built-in electric field of the nanowire radial -- diode proves to be inhomogeneous. This field reaches its maximum in the region of the i-layer adjoining the core. When moving away the i-layer from the nanowire center, the degree of field inhomogeneity decays, and both edge values of the field in the i-layer eventually reach the magnitude, which takes place in an analogous planar -- diode. This magnitude can be both higher and lower than the maximal field in the nanowire -- diode (depending on doping conditions). Simultaneously, the capacitance of the nanowire p-i-n diode can both increase and decrease in its value, going, at the same time, to weak voltage dependence inherent to the planar -- diode.
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| first_indexed | 2026-03-23T18:52:40Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215464 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:52:40Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borblik, V.L. 2026-03-18T11:39:09Z 2019 Electrostatics of the nanowire radial -- diode / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 201-205. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 61.46.Km, 62.23.St, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/215464 https://doi.org/10.15407/spqeo22.02.201 In this paper, the electrostatic theory of the nanowire radial core-shell -- homojunction has been considered. The calculations carried out show that, in contrast to a planar -- diode, the built-in electric field of the nanowire radial -- diode proves to be inhomogeneous. This field reaches its maximum in the region of the i-layer adjoining the core. When moving away the i-layer from the nanowire center, the degree of field inhomogeneity decays, and both edge values of the field in the i-layer eventually reach the magnitude, which takes place in an analogous planar -- diode. This magnitude can be both higher and lower than the maximal field in the nanowire -- diode (depending on doping conditions). Simultaneously, the capacitance of the nanowire p-i-n diode can both increase and decrease in its value, going, at the same time, to weak voltage dependence inherent to the planar -- diode. This work was supported by the National Academy of Sciences of Ukraine [project 2.2.6.34]. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Hetero- and Low-Dimensional Structures Electrostatics of the nanowire radial -- diode Article published earlier |
| spellingShingle | Electrostatics of the nanowire radial -- diode Borblik, V.L. Hetero- and Low-Dimensional Structures |
| title | Electrostatics of the nanowire radial -- diode |
| title_full | Electrostatics of the nanowire radial -- diode |
| title_fullStr | Electrostatics of the nanowire radial -- diode |
| title_full_unstemmed | Electrostatics of the nanowire radial -- diode |
| title_short | Electrostatics of the nanowire radial -- diode |
| title_sort | electrostatics of the nanowire radial -- diode |
| topic | Hetero- and Low-Dimensional Structures |
| topic_facet | Hetero- and Low-Dimensional Structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215464 |
| work_keys_str_mv | AT borblikvl electrostaticsofthenanowireradialdiode |