Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
In this paper, a review of microwave avalanche transit-time diode (IMPATT diode) structures has been presented. The structure of an IMPATT diode with a sharp p-n junction on Si has been considered, and the functions of the ohmic contacts have been shown. Physical and technical requirements for conta...
Збережено в:
| Дата: | 2019 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215465 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes / Ya.Ya. Kudryk, V.S. Slipokurov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 193-200. — Бібліогр.: 39 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | In this paper, a review of microwave avalanche transit-time diode (IMPATT diode) structures has been presented. The structure of an IMPATT diode with a sharp p-n junction on Si has been considered, and the functions of the ohmic contacts have been shown. Physical and technical requirements for contacts have been formulated based on their functional purpose and the existing technological base. A review of existing ohmic contacts and their ranking in terms of suitability and promising use in IMPATT diode has been made. The structure of metallization for the IMPATT diode was chosen in the framework of the specificity of the IMPATT diode operation.
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| ISSN: | 1560-8034 |