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Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes

In this paper, a review of microwave avalanche transit-time diode (IMPATT diode) structures has been presented. The structure of an IMPATT diode with a sharp p-n junction on Si has been considered, and the functions of the ohmic contacts have been shown. Physical and technical requirements for conta...

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Datum:	2019
Hauptverfasser:	Kudryk, Ya.Ya., Slipokurov, V.S.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215465
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes / Ya.Ya. Kudryk, V.S. Slipokurov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 193-200. — Бібліогр.: 39 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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