Buchumschlag

Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes

In this paper, a review of microwave avalanche transit-time diode (IMPATT diode) structures has been presented. The structure of an IMPATT diode with a sharp p-n junction on Si has been considered, and the functions of the ohmic contacts have been shown. Physical and technical requirements for conta...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Datum:	2019
ISSN:	1560-8034
Hauptverfasser:	Kudryk, Ya.Ya., Slipokurov, V.S.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215465
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes / Ya.Ya. Kudryk, V.S. Slipokurov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 193-200. — Бібліогр.: 39 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Ähnliche Einträge

Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
von: Ya. Ya. Kudryk, et al.
Veröffentlicht: (2019)

Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes
von: Romanets, P.M., et al.
Veröffentlicht: (2019)

Method for data processing in application to ohmic contacts
von: Belyaev, A.E., et al.
Veröffentlicht: (2019)

Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review)
von: Sachenko, A.V., et al.
Veröffentlicht: (2018)

Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes
von: P. M. Romanets, et al.
Veröffentlicht: (2019)

Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime
von: Latreche, A.
Veröffentlicht: (2021)

Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes
von: Latreche, A.
Veröffentlicht: (2019)

Combination of thermionic emission and tunneling mechanisms to analyze the leakage current for 4H-SiC Schottky barrier diodes
von: Latreche, A.
Veröffentlicht: (2019)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
von: Belyaev, A.E., et al.
Veröffentlicht: (2015)

Thermal annealing ambiance effect on phosphorus passivation and reactivation mechanisms in silicon-based Schottky diodes hydrogenated by MW-ECR plasma
von: Belfennache, D., et al.
Veröffentlicht: (2021)

Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena
von: Milenin, G.V., et al.
Veröffentlicht: (2020)

Reduction of reverse leakage current at the TiO₂/GaN interface in field plate Ni/Au/-GaN Schottky diodes
von: Shashikala, B.N., et al.
Veröffentlicht: (2021)

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
von: Belyaev, A.E., et al.
Veröffentlicht: (2008)

Phase transition in vanadium oxide films formed by multistep deposition
von: Kladko, V.P., et al.
Veröffentlicht: (2021)

Determination of the temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes
von: Latreche, A.
Veröffentlicht: (2020)

Effect of different parameters on the carrier mobility in NWTFET
von: Marki, R., et al.
Veröffentlicht: (2020)

Inversion of spin levels in exchange-coupled pairs under combined time reversal
von: Geru, I.I.
Veröffentlicht: (2018)

Key parameters of commercial silicon solar cells with rear metallization
von: Sachenko, A.V., et al.
Veröffentlicht: (2019)

Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon
von: Bakhadyrkhanov, M.K., et al.
Veröffentlicht: (2020)

Operating modes of avalanche-generator diodes of microwave range
von: P. P. Maksimov
Veröffentlicht: (2016)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
von: A. E. Belyaev, et al.
Veröffentlicht: (2015)

Calculation of spin-Hamiltonian constants for extended defects (Vsᵢ-Vc)⁰ (Ky5) in silicon carbide polytype 3C-SiC
von: Shanina, B.D., et al.
Veröffentlicht: (2018)

Dynamics of two-frequency avalanche-generator diodes of microwave range
von: K. A. Lukin, et al.
Veröffentlicht: (2015)

Influence of the mirror image forces on dispersion and phonon acoustic mode width of quasi-Rayleigh wave interacting with the adsorbed atoms
von: Seneta, M.Ya., et al.
Veröffentlicht: (2018)

Doping the thin films by using the original Close Space Sublimation method
von: Khomchenko, V.S., et al.
Veröffentlicht: (2020)

Energy of interaction between polarons and spatial configuration of bipolaron in two-dimensional systems
von: Kashirina, N.I., et al.
Veröffentlicht: (2020)

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
von: Arsentyev, I.N., et al.
Veröffentlicht: (2005)

Influence of cation substitution on the mechanical properties of (Cu₁₋ₓAgₓ)₇GeSe₅I mixed crystals and composites on their base
von: Bendak, A.V., et al.
Veröffentlicht: (2020)

Studying the mechanical properties of (Cu₁₋ₓAgₓ)₇GeS₅I mixed crystals by using the micro-indentation method
von: Bilanych, V.V., et al.
Veröffentlicht: (2018)

Mechanical properties of Cu₆PS₅І superionic crystals and thin films
von: Bilanych, V.V., et al.
Veröffentlicht: (2019)

Electron and hole effective masses in heavily boron-doped silicon nanostructures determined using cyclotron resonance experiments
von: Savchenko, D.V., et al.
Veröffentlicht: (2018)

Model research of phonon spectra of argyrodites family
von: Nebola, I.I., et al.
Veröffentlicht: (2018)

Model phonon spectra of Cu₇SiS₅I and Ag₇SiS₅I crystals
von: Nebola, I.I., et al.
Veröffentlicht: (2020)

Mechanical properties of superionic ceramics based on (Cu₁₋ₓAgₓ)₇GeSe₅I solid solutions
von: Bilanych, V.S., et al.
Veröffentlicht: (2021)

EPR study of paramagnetic centers in SiO₂:C:Zn nanocomposites obtained by infiltration of fumed silica with luminescent Zn(acac)₂ solution
von: Savchenko, D.V., et al.
Veröffentlicht: (2021)

The phenomenon of magnetic exchange bias in ferromagnetic nanocomposites grown by electron beam evaporation
von: Radchenko, M.V., et al.
Veröffentlicht: (2018)

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
von: Romanets, P.M., et al.
Veröffentlicht: (2016)

Methods for creation and properties of ohmic contacts to indium phosphide (rewiev)
von: Ya. Ya. Kudryk
Veröffentlicht: (2015)

Crystal structure and electrical properties of Ag₆PS₅I single crystal
von: Studenyak, I.P., et al.
Veröffentlicht: (2021)

Dielectric properties of nematic liquid crystal with impurities of supramolecular Ni-TMTAA-TCNQ complexes
von: Vovk, V.E., et al.
Veröffentlicht: (2020)