Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
In this paper, a review of microwave avalanche transit-time diode (IMPATT diode) structures has been presented. The structure of an IMPATT diode with a sharp p-n junction on Si has been considered, and the functions of the ohmic contacts have been shown. Physical and technical requirements for conta...
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| Date: | 2019 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215465 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes / Ya.Ya. Kudryk, V.S. Slipokurov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 193-200. — Бібліогр.: 39 назв. — англ. |
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