Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure
The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law...
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| Дата: | 2019 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215466 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure / I.B. Sapaev, B. Sapaev, D.B. Babajanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 188-192. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862637026481799168 |
|---|---|
| author | Sapaev, I.B. Sapaev, B. Babajanov, D.B. |
| author_facet | Sapaev, I.B. Sapaev, B. Babajanov, D.B. |
| citation_txt | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure / I.B. Sapaev, B. Sapaev, D.B. Babajanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 188-192. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| description | The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law dependence of the current on the voltage. It is shown that in the area of the sharp increase in current of the current-voltage characteristics, participation of defect-impurity complexes in recombination processes becomes decisive.
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| first_indexed | 2026-03-23T18:52:44Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215466 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:52:44Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sapaev, I.B. Sapaev, B. Babajanov, D.B. 2026-03-18T11:39:20Z 2019 Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure / I.B. Sapaev, B. Sapaev, D.B. Babajanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 188-192. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 73.40.-c, 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/215466 https://doi.org/10.15407/spqeo22.02.188 The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law dependence of the current on the voltage. It is shown that in the area of the sharp increase in current of the current-voltage characteristics, participation of defect-impurity complexes in recombination processes becomes decisive. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure Article published earlier |
| spellingShingle | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure Sapaev, I.B. Sapaev, B. Babajanov, D.B. Semiconductor physics |
| title | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure |
| title_full | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure |
| title_fullStr | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure |
| title_full_unstemmed | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure |
| title_short | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure |
| title_sort | current-voltage characteristics of the injection photodetector based on m(in)-cds-si-m(in) structure |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215466 |
| work_keys_str_mv | AT sapaevib currentvoltagecharacteristicsoftheinjectionphotodetectorbasedonmincdssiminstructure AT sapaevb currentvoltagecharacteristicsoftheinjectionphotodetectorbasedonmincdssiminstructure AT babajanovdb currentvoltagecharacteristicsoftheinjectionphotodetectorbasedonmincdssiminstructure |