Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure
The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Цитувати: | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure / I.B. Sapaev, B. Sapaev, D.B. Babajanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 188-192. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860479971318824960 |
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| author | Sapaev, I.B. Sapaev, B. Babajanov, D.B. |
| author_facet | Sapaev, I.B. Sapaev, B. Babajanov, D.B. |
| citation_txt | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure / I.B. Sapaev, B. Sapaev, D.B. Babajanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 188-192. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| description | The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law dependence of the current on the voltage. It is shown that in the area of the sharp increase in current of the current-voltage characteristics, participation of defect-impurity complexes in recombination processes becomes decisive.
|
| first_indexed | 2026-03-23T18:52:44Z |
| format | Article |
| fulltext |
ISSN 1560-8034, 1605-6582 (On-line), SPQEO, 2019. V. 22, N 2. P. 188-192.
© 2019, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
188
Semiconductor physics
Current-voltage characteristic of the injection photodetector
based on M(In)–nCdS–pSi–M(In) structure
I.B. Sapaev
1
, B. Sapaev
2
, D.B. Babajanov
3
1
Physical-Technical Institute, Scientific Association “Physics – Sun”, Uzbekistan Academy of Sciences,
2B, Bodomzor Yuli str., 100084 Tashkent, Uzbekistan
2
Tashkent State Agrarian University, 2, University Str., 100140 Tashkent, Uzbekistan
3
Turin Polytechnic University in Tashkent, 17, Niyazov Str., 100095 Tashkent, Uzbekistan
Corresponding author: sapaevibrokhim@gmail.com
Abstract. The current-voltage characteristic of an injection photodiode of the In–n-CdS–
p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at
room temperature, has been investigated. It is found that the current-voltage characteristic
of such structures has a power-law dependence of the current on the voltage. It is shown
that in the area of the sharp increase in current of the current-voltage characteristics,
participation of defect-impurity complexes in recombination processes becomes decisive.
https://doi.org/10.15407/spqeo22.02.188
PACS 73.40.-c, 85.60.Dw
Keywords: injection, current-voltage, defect-impurity complexes, bipolar drift length,
bipolar diffusion length.
Manuscript received 12.11.18; revised version received 07.05.19; accepted for publication
19.06.19; published online 27.06.19.
1. Introduction
There are well known data on formation of injection
photodiodes based on А
2
В
6
compounds, in particular
based on sulfide and cadmium telluride and their solid
solutions [1-4]. Ni–n-CdS–n
+
-CdS structure based on
CdS single crystals is considered to have photocurrent
strengthening when the structure is illuminated with λ =
0.22 µm light, since there is an injection of the majority
charge carriers into a high-resistance n-area from the
non-illuminated side of n
+
-n transition [1]. The injection
photo-detector with internal strengthening based on
cadmium sulfide, capable to operate at room temperature
in a wide range of spectrum is not created yet. Such an
injection photo-detector with increased output parameters
can be created on the p-i-n based structures. For A
2
B
6
semiconductors, including CdS, it is technologically
difficult to obtain p-type conductivity and p-i-n structure
on its base because of self-compensation effect. To avoid
this problem, we created In–n-CdS–p-Si–In structure
with heterojunction. The high-resistant strongly
compensated weak n-type CdS layer plays the role of
i-layer here. The choice of p-Si–n-CdS heterojunction
was previously described in [5].
2. Preparation of samples
The photosensitive In–n-CdS–p-Si–In structure was
created using deposition of CdS layer under the pressure
10
–5
Torr on the surface of p-type silicon plate with
the specific resistance ρ ≈ 10 Ohm·cm and thickness
300 µm. Thus, the CdS source temperature Tsourse was
maintained at 800…850 °C and substrate (p-Si)
Tsubstr = 250…300 °C. Observation under the microscope
MII-4 showed that CdS films grown on p-Si substrate
consist of columnar crystallites oriented along
the direction of films growth and disorientated on
the azimuth direction. We ascertained that the crystallite
size was strongly dependent on technological modes and,
first of all, on the temperature of Si substrate. For
example, CdS films prepared at Tsubstr = 300 °C had the
crystallites size close to 3-4 µm and completely
penetrated through the film thickness w ≈ 2 µm. The
obtained CdS films were high-resistive, with the specific
resistance ρ = (2…3)·10
10
Ohm·cm and weak n-type
conductivity.
The current-collecting Π-shaped contact also was
formed by vacuum evaporation of indium.
SPQEO, 2019. V. 22, N 2. P. 188-192.
Sapaev I.B., Sapaev B., Babajanov D.B. Current-voltage characteristic of the injection photodetector …
189
3. Experimental results and discussion
In Fig. 1, the direct and inverse branches of j-U
characteristics inherent to the In–n-CdS–p-Si–In structure
are presented in half-logarithmic scale. “+” potential
applied to the p-Si contact is considered as the forward
direction of current in the structure, and with “–”
potential – as backward. Our analysis of j-U
characteristics shows that the structure has rectification
properties, and its rectification factor K (defined as the
ratio of a direct and inverse current at fixed voltage
U = ±20 ) is approximately 10
5
.
The analysis of direct j-U characteristics of
In–n-CdS–p-Si–In structures have shown that it consists
of four plots at room temperature [6].
The first, second, fourth parts are described by the
exponential dependence of current on voltage and have
the following analytical form [7]:
( )( )1exp0 −= ckTeUII , (1)
( )( ) ( )11ch2 +++= bLwbc , (2)
( ) ( )( ) ( ) ( )[ ]LwLbLwbqkTc 2tan12ch ⋅ρ⋅⋅+⋅= . (3)
Here, pnb µµ= – electrons to holes mobility ratio,
w – base thickness, c – exponent index, I0 – pre-
exponential multiplier, e – electron charge, k –
Boltzmann constant, T – temperature in Kelvins, U – bias
voltage, L – drift length.
Here, we will analyze only the fourth part, since the
first, second, and third parts were analyzed in detail in
our previous work [6].
Plots of current-voltage characteristics in semi-logarithmic
scale in the dark: (I) forward branch, (II) reverse branch. The
third (3) and fourth (4) parts has been indicated on the forward
branches (I), while the first (1) and second (2) parts has been
shown on the forward branches in the plot [6].
As noted above, the fourth part of j-U characteris-
tics is defined by the exponential dependence I =
( )404 exp kTcqUI= , where c4 = 2.5, j04 =1.9·10
–7
A/cm
2
.
Substituting these experimental data into Exps (2) and
(3), we determine the relations of base thickness for the
drift length of holes w/L = 8.5, and L = 0.24 µm, and the
resistivity of the base ρ = 1.9·10
7
Ohm·cm at the values
b = 38, w = 2 µm [8]. The parameters L and ρ estimated
from the fourth section of the j-U characteristic differ
significantly from those calculated from the second
section of this characteristic. The difference between
these values can be explained by a change in the
properties of the base with an increase in the current
density in the structure. After the sublinear section of the
j-U characteristic, the recharging of highly compensated
recombination centers leads to a decrease in the lifetime
of minority carriers, namely, holes. The structure
acquires the properties of “long” diodes [9], in which the
current is predominantly defined by the drift mechanism.
To confirm this assumption, we determined the bipolar
diffusion and drift mobilities from the fourth section of
the current–voltage characteristic. The experiments
demonstrated that the bipolar diffusion length in the
fourth section of the forward j-U branch is two times less
than the value of L in the second section of the j-U
characteristic and is equal to 0.24 µm. In this case, the
product µτ decreases by the factor of four. Further,
assuming that the mobility and lifetime of the plasma of
electron–hole pairs equally decrease by a factor of two,
from the expression L = (D·τ)
0.5
, we find that Da =
= 3.3·10
–1
cm
2
·s
–1
for the parameters L = 0.24 µm and τ =
= 1.75·10
–8
s. Since Da = (kT/q)µD, we found that the
mobility of the bipolar diffusion of free carriers µD =
= 12.5 cm
2
/V·s. The bipolar drift mobility of free carriers
was determined as follows. It was assumed that, in this
section of the j-U characteristic, the defining current in
the structure is the drift one. Therefore, from the values
of the voltage and current at the end of the fourth section
of the j-U characteristic (U = 20 V, j = 0.18 A/cm
2
), we
determined the electrical resistivity of the base of the
structure. Next, assuming that all the hole-trapping
centers (Nt = 2·10
10
cm
–3
) that play a decisive role in the
modulation of the bipolar drift velocity in the sublinear
section of the j-U characteristic are filled, we find that the
concentration of electron–hole plasma is no less than
10
11
cm
–3
, which is significantly higher than the
concentration of the trapping centers. Then, using the
formula R = ρd/S, where w ≈ 2µm (thickness of the base),
ρ is the electrical resistivity of the base, and S = 0.1 cm
2
is the active surface area of the structure, we determined
the bipolar drift mobility µa = 112 cm
2
/V·s. It is known
that a significant part of the applied potential in the
injection diodes drops across the base of the structure.
Therefore, for simplicity, it was assumed that the
potential U = 20 V applied to the structure is equally
distributed between the In–n-CdS injecting contact and
the base (n-CdS). In this case, we have the bipolar drift
velocity of holes va = 5.6·10
6
cm/s. For this bipolar drift
velocity, we obtain the bipolar drift length of holes Ldr ≈
≈ 5.6·10
–2
cm for the parameter τ ≈ 10
–8
s (the lifetime of
SPQEO, 2019. V. 22, N 2. P. 188-192.
Sapaev I.B., Sapaev B., Babajanov D.B. Current-voltage characteristic of the injection photodetector …
190
the electron–hole plasma), which is more than three
orders of magnitude longer than the bipolar diffusion
length (L = 0.24 µm). The above performed estimations
demonstrate dynamics of increasing the bipolar drift
velocity, which completely confirms that, in the fourth
section of the current-voltage characteristic, the drift
mechanism dominates.
The fourth part of j-U curve is also well described
by the power law of the type βUJ ~ , where β ≈ 6.2. At
sufficiently high injection levels, the concentration of
non-equilibrium carriers in In–n-CdS strongly increases
and, therefore, even in the asymmetric transition it starts
playing a prominent role for the second component of
current, i.e., the drift current [10]. In this case, a decisive
role even at the boundary layer, space charge starts
playing the carrier drift in the electric field.
The electrical conductivity of the base layer
increases more slowly as compared to the increase in the
current, and the j-U characteristic is described by the
power law [6]:
( ) ( ) ( )SwUpneI pn
3
0089
βτµµ−= , (4)
where n0, p0 are the equilibrium concentrations of
electrons and holes, µn, µp – mobilities of electrons and
holes, τ is the lifetime of electron-hole plasma, 4...2≈β .
Further, the product µnµp ≈ 4·10
7
(cm
2
·V
–1
·s
–1
)
2
was
calculated on the basis of equation (4) for the given
values: ρ ≈ 2·10
10
Ohm·cm, n0 ≈ 10
6
cm
–3
and µn =
= 289 cm
2
·V
–1
·s
–1
[7], and the values of current j =
= 0.18 A·cm
–2
and U = 20 V. Thus, the obtained value of
µnµp is larger by four orders than their values according
to the literature data [1]. Moreover, this difference is
obtained in the case when µn = 289 cm
2
·V
–1
·s
–1
and µp =
= 8 cm
2
·V
–1
·s
–1
like to those in single crystals CdS [6]. In
addition, the final evaluation indicates that there is
conductivity modulation in the base, where the main role
is performed by the rapid growth of the bipolar drift
mobility of the non-equilibrium carriers with current.
This is because the mobility of the bipolar electron-hole
plasma, according to [1], is defined as
pn
pn mn
dp
dn
pn
µµ
µ+µ
−
=µ , (5)
which has a value in the numerator, depending on the
difference of concentrations of charge carriers. In the
fourth part of the j-U curve the change probably occurs in
the numerator of Exp. (5) leading to a sharp increase in
the mobility of the bipolar electron-hole plasma. The
reason may be the levels of adhesion for holes being
active.
According to the theory [11], the section of the
power current-voltage type βUJ ~ , β > 2 follows the
part of the exponential dependence of the type
ckT
eU
J exp− and index of power is not higher than four.
However, due to the structure of the In–n-CdS–
p-Si–In, the plot type βUJ ~ occurs after the sublinear
part of the j-U curve and β ≈ 6.2 at the room temperature.
This j-U curve shape can also be explained in the frame
of the theory for the drift mechanism of current transfer,
if taking into account the possibility of exchange of free
carriers inside a recombination complex. Due to the
structure of the In–n-CdS–p-Si–In, the base is heavily
compensated high-resistivity polycrystalline film of
cadmium sulfide. Obviously, in these films there may be
point defects, such as vacancies of atoms of cadmium
(Cd) and sulfur atoms (S). In addition, in the initial
powders of CdS compounds, from which the
polycrystalline CdS film was obtained, according to
technical conditions, there are a few chemical elements:
In, Al, Ag, Cu, Fe etc. Therefore, forming complexes of
various types should be expected in the database (CdS).
In the form of compounds, CdS volatile components are
the atoms of cadmium. Therefore, in the sublattice of
cadmium atoms singly and doubly charged vacancies are
easily formed. Doubly charged vacancies of cadmium
atoms in most cases form complexes with the positively
charged impurity of type ( ) 12
Cd CdV
−+− and neutral sulfur
atoms of type ( ) 22
Cd SV
−∗− . In addition to these mentioned
above, complexes have a large probability of formation
of such defect-impurity complexes to negatively
“charged acceptor + positively charged ion of
introduction” or “positively charged donor + negatively
charged vacancy” that can play a decisive role in
recombination processes. Therefore, recombination
processes in the base of the structure occur not only
through simple recombination centers [12] but also
through defect-impurity complexes. In this case,
the expression for the rate of recombination is
undergoing fundamental change and takes the form as
follows [11]
( )
( ) ( ) pnppcnnc
nnpcc
Nv
iipin
ipn
R
ατ+−+−
−
=
2
, (6)
where NR is the concentration of recombination centers
(complexes); n, p are concentrations of electrons and
holes; ni is its intrinsic concentration of carriers in the
semiconductor; cn, cp are the capture coefficients for
electrons and holes; n1, p1 are equilibrium concentrations
of electrons and holes under conditions when the Fermi
level coincides with the impurity level (called as static
factors by Shockley–Read); τi is time taking into account
certain processes of electron exchange inside the
recombination complex; and β is the coefficient
depending on the specific type of impurity or defect-
impurity complexes (see [11]).
Despite the different type of complexes, they follow
one general pattern – recombination of non-equilibrium
electrons and holes with delay, and this inertia of the
electron exchange inside the recombination complex
SPQEO, 2019. V. 22, N 2. P. 188-192.
Sapaev I.B., Sapaev B., Babajanov D.B. Current-voltage characteristic of the injection photodetector …
191
causes the appearance of the latter term in the
denominator of Exp. (6). At a sufficiently high level of
excitation, it may be crucial. According to the theory
[11], areas of j-U βUJ ~ , where β > 2, can be realized
when recombination of non-equilibrium current carriers
happens with delay, i.e., with participation of complexes
for an electronic exchange. In this case, in the
denominator of Exp. (6) the following inequality is
realized [11]:
( ) ( ) pnppcnnc iipin ατ<+++ (7)
and C-U relationship has the following analytical
expression for the structure of p-type base [11]:
.
)1(2
)1(
)1(
22
J
D
JBA
JCbN
cNwb
Сbq
bJw
bN
Nwb
V
ina
pR
nina
R
−+=
=
βτµ
+
+
+µ
+
τµ
+
=
(8)
Since the investigated structure was created on the
basis of the highly compensated cadmium telluride,
therefore, the concentration of shallow acceptors NA
=Na – Nd. The parameter C is related with the
concentration of electrons at the boundary n-CdS – n-SiO
can be expressed as that in [11]:
JCp =)0( . (9)
The dependence (7) allows to describe any value of
the slope of the j-U type βUJ ~ , including the site of
sharp growth. A comparison of the backward part of j-U
dependence 8.4...7.4~ ≈βUJ with Exp. (7) allows to
determine parameters such as NR /τi, p(0), αpc (τi is the
time delay inside the complex, NR – concentration of
complexes). For this, the equation of a straight line is
suitable for the obtained experimental points. For
example, making the equation of the straight line for the
two experimental points (J1, U1 and J2, U2) allows
determining the value of the voltage [11],
1
12
21
1 J
JJ
UU
UU
−
−
−= (10)
for which it can equate to
inA
R
N
Nwb
A
τµ
+
=
2)1(
from Eq. (8).
Further, substituting the values w = 120 µm, b = 10, µ ≈
≈ 100 cm
2
/V
–1
·s
–1
and NA = 1.5·10
10
cm
–3
into (7), we
easily define the expression iRN τ . To determine other
parameters, the sharp growth of current was chosen by
three experimental points (U1, J1), (U2, J2), (U3, J3), for
which three equations are applied to determine the
coefficients B and D [11]
12
21
12
12
11
JJ
JJ
D
JJ
UU
B
−
−
−
−
−
= , (11)
( ) ( )
12
23
2132
12
23
2323
1111
JJ
JJ
JJJJ
JJ
JJ
UUUU
D
−
−
−−
−
−
−
−−−
= (12)
which are then equated to their analytical values given in
Eq. (8) allowing to estimate the values µnC, n(0), NR /τi
and the value ατi /cn being respectively equal to NR /τi =
= 3.5·10
14
cm
–3
·s
–1
. n(0)n = 1.4·10
14
cm
–3
and n(0) =
= 1.3·10
16
cm
–3
. In this way, specific values of the
concentration ratio of the complexes on the delay in
complexes and the concentration of the injected non-
equilibrium electrons at the beginning and at the end of
the segment, the sharp growth of current is reasonable
side-altars, as evidenced by the correctness of the
assumption. This leads to the conclusion that the
recombination processes predominantly involved
intrinsic complex systems for the electronic exchange, as
a result inertia can appear in the structure. In this case,
we are not able to say exactly that complexes are
involved in the recombination processes. As was
estimated, the value ατi /cn = 9·10
–10
cm is the integral
value, where α is a coefficient depending on the specific
type of impurity or defect-impurity complexes. In this
case, to make full clarity on this issue, it is essential to
know the type of complex, which occurs mainly through
recombination processes being unknown at the moment.
The direct sequence parts of j-U dependence shows
that the investigated complex structure and with
increasing current density can change the mechanism of
current transfer. At low current densities of the
resistance, the thickness of the space charge is decisive in
the resistance of structures, and the transfer mechanism is
the thermionic emission. In the second part of the j-U
dependence, a significant fraction of the voltage falls on
the thickness of the base structure, and the current in
structure is restricted by recombination. And, in the
recombination processes, defining role is related with
simple point recombination centers. The third sublinear
part of the j-U dependence is characterized by the
recombination processes in a large part affected by
participation of complex systems; consequently, the
lifetime of non-equilibrium carriers is larger than their
flight time. This phenomenon leads to change of
distribution profile of non-equilibrium carriers resulting
in a counter-diffusion and drift flows, which results in
appearance of sublinear part in the j-U curve. Appearance
of the part with a sharp growth of current is obvious that
becomes extremely important in the presence of high
concentrations of the injected non-equilibrium carriers
10
14
to 10
16
cm
–3
participating in complexes during the
recombination processes.
SPQEO, 2019. V. 22, N 2. P. 188-192.
Sapaev I.B., Sapaev B., Babajanov D.B. Current-voltage characteristic of the injection photodetector …
192
4. Conclusion
An injection photodiode has been created using the
In–n-CdS–p-Si–In structures. The important advantage of
the developed structure is that such photodetectors can
operate in a wide spectral range of electromagnetic
radiation at room temperature. Those photodetectors can
be effectively used in optical systems for detecting weak
light signals, especially in spectral analyzers for
determining the elemental composition of metals and
their alloys.
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Authors and CV
Bayramdurdy Sapaev defended his
Doctoral Dissertation in Physics
(Theoretical Condensed Matter
Physics) in 2006. Head of the
Department of Physics and
Chemistry, Tashkent State Agrarian
University, Uzbekistan. The area of
his scientific interests includes
theoretical condensed matter physics.
Doniyor Bahodirovich Babajanov.
Research assistant, Turin Polytechnic
University in Tashkent, Uzbekistan.
His main research field is theoretical
Physics. His research interests include
nonlinear evolution equations on
branched systems and networks,
condensed matter physics: particle
transport in low-dimensional nano-
scale systems and cold atom physics
nonlinear dynamics of BEC and
vortices.
Ibrokhim Sapaev defended his Ph.D.
dissertation in semiconductor physics
in 2018 at Physical-technical Institute,
Tashkent, Uzbekistan. Senior
Researcher of Physical-technical
Institute, Tashkent, Uzbekistan. The
area of his scientific interests includes
semiconductor devices and materials
science (diodes, solar cells, nuclear
detectors, Si-CdS alloys, Si-CdTe,
CVD epitaxy of semiconductor materials), growth of CdS,
CdTe, CdO thin films, fabrications, characterizations and
testing of device structures based on Si-CdS, Si-CdTe,
Si-CdTe-CdS, Si-CdTe-CdO.
|
| id | nasplib_isofts_kiev_ua-123456789-215466 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:52:44Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sapaev, I.B. Sapaev, B. Babajanov, D.B. 2026-03-18T11:39:20Z 2019 Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure / I.B. Sapaev, B. Sapaev, D.B. Babajanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 188-192. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 73.40.-c, 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/215466 https://doi.org/10.15407/spqeo22.02.188 The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law dependence of the current on the voltage. It is shown that in the area of the sharp increase in current of the current-voltage characteristics, participation of defect-impurity complexes in recombination processes becomes decisive. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure Article published earlier |
| spellingShingle | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure Sapaev, I.B. Sapaev, B. Babajanov, D.B. Semiconductor physics |
| title | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure |
| title_full | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure |
| title_fullStr | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure |
| title_full_unstemmed | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure |
| title_short | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure |
| title_sort | current-voltage characteristics of the injection photodetector based on m(in)-cds-si-m(in) structure |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215466 |
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