Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure
The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law...
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| Datum: | 2019 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215466 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure / I.B. Sapaev, B. Sapaev, D.B. Babajanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 188-192. — Бібліогр.: 12 назв. — англ. |