Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure

• Date: 2019
• Main Authors: Sapaev, I.B., Sapaev, B., Babajanov, D.B.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Subjects: Semiconductor physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215466
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure / I.B. Sapaev, B. Sapaev, D.B. Babajanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 188-192. — Бібліогр.: 12 назв. — англ.

The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law...