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Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure

The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law...

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Datum:	2019
Hauptverfasser:	Sapaev, I.B., Sapaev, B., Babajanov, D.B.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215466
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure / I.B. Sapaev, B. Sapaev, D.B. Babajanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 188-192. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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