Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe

• Дата: 2019
• Автори: Uteniyazov, A.K., Ismailov, K.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Теми: Semiconductor physics
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/215469
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe / A.K. Uteniyazov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 165-170. — Бібліогр.: 15 назв. — англ.

It has been shown that the density of surface states at the interface of the Al-Al₂O₃–p-CdTe–Mo structure is sufficiently low. It was found that at the interface, being in the thermodynamically equilibrium state, there is a bend of the edge of the allowed bands, as evidenced by the values of the surface potential, which are equal to 0.17 eV before and 0.25 eV after treatment. It has been ascertained that the surface states in the lower half of the band gap are almost completely annealed. It has been shown that ultrasonic treatment significantly affects the fluctuations of surface charges at the interface and eliminates unstable point defects located in the surface layer of the semiconductor. It has been established that the ultrasonic treatment has practically no effect on the patterns of current transfer, both in the forward and reverse directions. It has been shown that after the ultrasonic treatment, the forward current increases by about 25…30%, and the reverse current decreases by 6…9%; the rectification coefficient increases by 1.4 times.