Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe
It has been shown that the density of surface states at the interface of the Al-Al₂O₃–p-CdTe–Mo structure is sufficiently low. It was found that at the interface, being in the thermodynamically equilibrium state, there is a bend of the edge of the allowed bands, as evidenced by the values of the sur...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Zitieren: | Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe / A.K. Uteniyazov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 165-170. — Бібліогр.: 15 назв. — англ. |
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| author | Uteniyazov, A.K. Ismailov, K.A. |
| author_facet | Uteniyazov, A.K. Ismailov, K.A. |
| citation_txt | Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe / A.K. Uteniyazov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 165-170. — Бібліогр.: 15 назв. — англ. |
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| description | It has been shown that the density of surface states at the interface of the Al-Al₂O₃–p-CdTe–Mo structure is sufficiently low. It was found that at the interface, being in the thermodynamically equilibrium state, there is a bend of the edge of the allowed bands, as evidenced by the values of the surface potential, which are equal to 0.17 eV before and 0.25 eV after treatment. It has been ascertained that the surface states in the lower half of the band gap are almost completely annealed. It has been shown that ultrasonic treatment significantly affects the fluctuations of surface charges at the interface and eliminates unstable point defects located in the surface layer of the semiconductor. It has been established that the ultrasonic treatment has practically no effect on the patterns of current transfer, both in the forward and reverse directions. It has been shown that after the ultrasonic treatment, the forward current increases by about 25…30%, and the reverse current decreases by 6…9%; the rectification coefficient increases by 1.4 times.
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| first_indexed | 2026-03-23T18:52:47Z |
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ISSN 1560-8034, 1605-6582 (On-line), SPQEO, 2019. V. 22, N 2. P. 165-170.
© 2019, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
165
Semiconductor physics
Effect of ultrasound irradiation on the electro-physical properties
of the structure of Al–Al2O3–CdTe
A.K. Uteniyazov, K.A. Ismailov
Berdakh Karakalpak State University
Uzbekistan, Republic of Karakalpakstan, 742012 Nukus, Abdirov str., 1
E-mail: abat-62@mail.ru
Abstract. It has been shown that the density of surface states at the interface of the
Al–Al2O3–p-CdTe–Mo structure is sufficiently low. It was found that at the interface being
in the thermodynamically equilibrium state, there is a bend of the edge of the allowed
bands, as evidenced by the values of the surface potential, which are equal to 0.17 eV
before and 0.25 eV after treatment. It has been ascertained that the surface states in the
lower half of the band gap are almost completely annealed. It has been shown that
ultrasonic treatment significantly affects the fluctuations of surface charges at the interface
and eliminates unstable point defects located in the surface layer of semiconductor. It has
been established that the ultrasonic treatment has practically no effect on the patterns of
current transfer both in the forward and reverse directions. It has been shown that after the
ultrasonic treatment, the forward current increases by about 25…30%, and the reverse
current decreases by 6…9%, the rectification coefficient increases by 1.4 times.
Keywords: ultrasonic treatment, film, Schottky barrier, diode structure.
https://doi.org/10.15407/spqeo22.02.165
PACS 72.10.-d, 73.61.Ga, 73.40.Sx
Manuscript received 05.03.19; revised version received 16.05.19; accepted for publication
19.06.19; published online 27.06.19.
1. Introduction
Currently, it is considered as an established fact that
ultrasonic treatment (UST) affects structural defects and
the electrophysical characteristics of semiconductors and
semiconductor structures [1-6]. The advantages of UST
as compared with an annealing and radiation exposure
include the following features:
1) the absorption of ultrasonic waves in a solid
occurs predominantly in areas of disturbances of the
periodicity of its crystal lattice and, therefore, the
ultrasonic effect is more local;
2) the use of ultrasonic waves of different
polarization and type allows to increase the selectivity of
influence;
3) by selecting the frequency of ultrasonic vibra-
tions, it is possible to achieve resonant transformations in
the defect subsystem.
It is known that the electrophysical and
photoelectric properties of heterojunctions and MOS
structures strongly depend on the properties of
semiconductor surface. Since various surface effects
directly affect the reliability and stability of virtually all
types of semiconductor devices, the study of surface
properties in physics of metal-dielectric-semiconductor
(MOS) structures plays a great role in all semiconductor
technology. In [7, 8], we investigated surface states at the
interface of the Al–Al2O3–p-CdTe structure. In [9], it was
shown that such a structure has the property of an
injection photodetector and amplifies the primary
photocurrent even in the absence of an external bias
voltage.
The goal of this work was to study the effect of
ultrasonic treatment on the electrical properties of the
Al–Al2O3–p-CdTe structure, i.e., MOS structure.
2. Samples and measurement method
To solve the problems posed, we obtained p-CdTe film
structures with a columnar grain structure on a Mo
substrate by sublimation in a hydrogen flow. A MOS
structure was created on the surface of the obtained
p-CdTe films by sputtering aluminum in vacuum
(~10
–5
Torr) [10]. The p-CdTe films had the resistivity
ρ ≈ 10
9
…10
11
Ohm·cm and the lifetime of minority
electron carriers τ ~ 10
–8
…10
–7
s. The performed X-ray
structural analysis showed [11, 12] that a thin oxide layer
of Al2O3 with the thickness close to 30 nm is formed
during the preparation process, but this layer plays a very
important role in operation of the structure obtained.
https://en.yellowpages.uz/region/republic-of-karakalpakstan
https://en.yellowpages.uz/city/nukus
https://en.yellowpages.uz/street/street-abdirov/nukus
mailto:abat-62@mail.ru
SPQEO, 2019. V. 22, N 2. P. 165-170.
Uteniazov A.K., Ismailov K.A. Effect of ultrasound irradiation on the electro-physical properties of the structure …
166
-8 -6 -4 -2 0 2 4 6 8
8,0x10
-11
1,0x10
-10
1,2x10
-10
1,4x10
-10
1,6x10
-10
1,8x10
-10
2,0x10
-10
2,2x10
-10
2,4x10
-10
a
C
,
F
U, V
1
2
-8 -6 -4 -2 0 2 4 6 8
2,0x10
19
4,0x10
19
6,0x10
19
8,0x10
19
1,0x10
20
1,2x10
20 C
-2
U, V
a
Mainly due to this fact that it turns out not the metal-
semiconductor structure, but the MOS structure, namely,
Al–Al2O3–p-CdTe (Al – metal, Al2O3 – oxide, CdTe –
semiconductor).
One of the methods for studying the surface of
semiconductors in MIS (MOS) structures is the method
of voltage-capacitance characteristics, which is non-
destructive and a most informative. The capacitance-
voltage characteristics were measured at the frequencies
1…5 kHz, which also made it possible to detect the
presence of MOS elements (structures) in the samples
-2,0 -1,5 -1,0 -0,5 0,0 0,5 1,0 1,5 2,0
0,0
5,0x10
-11
1,0x10
-10
1,5x10
-10
2,0x10
-10
2,5x10
-10
bC
,
F
1-эксперимент
2-расче
U, V
1
2
-2,0 -1,5 -1,0 -0,5 0,0 0,5 1,0 1,5 2,0
0,0
5,0x10
20
1,0x10
21
1,5x10
21
2,0x10
21
U, V
C
-2 b
under study. Ultrasonic treatment was carried out at the
frequency 2.5 MHz with the power P = 1 W/cm
2
for
15 min.
3. Experimental results and discussion
The experimental voltage-capacitance characteristic
(Fig. 1a, curve 1) was taken at the frequencies within the
kHz range. The calculated C(U) characteristic (Fig. 1a,
curve 2) was obtained like to that in [13]. When
Fig. 1. The experimental (1) and calculated (2) C(U) curves for the structure Al–Al2O3–p-CdTe–Mo before (a) and after (b)
UST.
Fig. 2. Dependence of C
–2
(U) of the structure of Al–Al2O3–p-CdTe–Mo before (a) and after (b) treatment.
-2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0
U, V
-2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0
U, V
-8 -6 -4 -2 0 2 4 6 8
U, V
-8 -6 -4 -2 0 2 4 6 8
U, V
2.0x
1.5x
1.0x
5.0x
2.4x10
-10
2.2x10
-10
2.0x10
-10
1.8x10
-10
1.6x10
-10
1.4x10
-10
1.2x10
-10
1.0x10
-10
0.8x10
-10
-2
0
2.5x10
-10
2.0x10
-10
1.5x10
-10
1.0x10
-10
0.5x10
-10
0
1.0x
8.0x
6.0x
4.0x
SPQEO, 2019. V. 22, N 2. P. 165-170.
Uteniazov A.K., Ismailov K.A. Effect of ultrasound irradiation on the electro-physical properties of the structure …
167
determining the calculated C(U) characteristics, we used
the values of the oxide layer capacitance (Ci) and the
concentration of equilibrium holes of semiconductor (p0),
determined directly from the experimental capacitance-
voltage characteristic. The capacitance Ci ≈ 2.3∙10
–10
F
before and Ci ≈ 2.24∙10
–10
F after UST was determined
from the capacitance value on the plateau of the
experimental C(U) characteristics.
Having plotted C(U) characteristics in coordinates
1/C
2
(U) (see Figs. 2a, 2b), we determined the
concentration of equilibrium hole carriers in the base of
the structure, which turned out to be ≈2.85∙10
13
cm
–3
before and 1.9∙10
12
cm
–3
after UST. The concentration p0
was also determined from the minimum capacitance Cmin,
which was ≈3∙10
13
cm
–3
before and 2∙10
12
cm
–3
after
UST.
Thus, the values of p0 before and after treatment,
determined by two independent methods, were almost at
the same level.
In addition, extrapolating the C(U) dependence to
the voltage axis at 1/C
2
→ 0, we determined the potential
barrier height ~0.68 eV before and ~0.55 eV after UST.
A comparison of the experimental capacitance-voltage
characteristics before and after UST indicates that the
capacitance of the structure, as a result of treatment,
changes in a complex way.
First, the range of changes in the value of
capacitance expands significantly, it is approximately
four times larger. Second, the values of the bias voltage
of the intersection point of the experimental and
calculated C(U) curves vary considerably; if they
intersect at U ≈ 0.2 V before treatment, then after at U ≈
≈ 0.5 V. If we assume that the intersection point of C(U)
curves shows formation of flat bands at the interface
between the semiconductor and dielectric (oxide), then it
should be noted that UST has a significant effect on the
surface potential ψS under thermodynamic equilibrium. It
can be concluded that, at the interface of the MOS
structure under study, the surface potential has a positive
value, which significantly increases as a result of
ultrasonic treatment. It means that the surface states are
annealed in the lower half of the forbidden band of
semiconductor. Comparison of the 1/C
2
(U) dependences
before and after treatment (see Figs 2a and 2b) also
shows that in this structure the semiconductor surface at
the interface before treatment has a certain region of
depth inhomogeneities, which in the experiment appear
as the ranges where the value 1/C
2
remains constant in
voltage, and each this range corresponds to a certain
concentration of carriers in the depletion region, and they
are practically absent after treatment. These experimental
facts indicate the presence of micro-inhomogeneities in
the depth of the semiconductor at the interface formed
during formation of the MOS structure, which almost
disappear after treatment. The density of the surface
states of Dit was determined directly from the experi-
mental high-frequency capacitance-voltage characteristic
[14]. Charges on surface states at high frequencies
(ωτ >> 1) have no time to follow the changes in the
alternating voltage. At the same time, the capacitance of
the MOS structure is described as that of the ideal MOS
structure like to [14]:
Di
Di
CC
CC
C
(F/cm
2
) , (1)
where CD is the semiconductor capacitance, Ci –
capacitance of the dielectric layer (oxide), which is
determined using C(U) characteristics. Eq. (1) corres-
ponds to the series connection of the semiconductor
capacitance CD and that of dielectric layer Ci. The
semiconductor capacitance CD changes with the voltage
applied to the structure and is described by the following
expression [14]:
0
0
0
0
,
11
2 D
p
p
S
p
p
S
S
S
D
p
n
F
e
p
n
e
Ld
dQ
C
SS
(F/cm
2
), (2)
where LD is the Debye length, ψS – surface potential,
β = q
/
kT, k – Boltzmann constant.
Surface states affect the shape of the capacitance-
voltage characteristic by shifting and stretching it along
the stress axis. In the presence of a bound surface charge,
a corresponding increase in charge on the metal contact is
required, which occurs when a constant potential (U) is
applied, as compared to an ideal MOS structure, in order
to achieve the same value of the surface potential.
According to the shape of the high-frequency volt-farad
characteristic, the density of surface states is defined
according to the following expression [14]:
q
C
dVd
q
C
D D
S
i
it
1
1
(cm
–2
eV
–1
). (3)
To determine the density of surface states Dit, first,
using the value of the total capacitance C in accord with
the formula (2), we determined the differential
capacitance of semiconductor CD for a given value of the
bias voltage U. Then, having built the dependence ψS(U)
(see Figs 3a, 3b), we determine the derivative dψS /dV by
graphical differentiation like to that in [14], which is
necessary to determine the density of surface states by
using the formula (3).
Analysis of the data in Figs. 3a and 3b shows that,
indeed, at the interface with thermodynamic equilibrium
(in the absence of a bias voltage) there is a bend of the
edge of the allowed bands, as evidenced by the values of
the surface potential, which are ψS ≈ 0.17 eV before and
ψS ≈ 0.25 eV after treatment. It means that UST, in fact,
leads to annealing of the surface states in the lower half
of the forbidden band of semiconductor at the interface,
which also confirms the decrease in the height of the
potential barrier as a result of treatment. The above
results suggest that these surface states are involved in
formation of a potential barrier, especially before
SPQEO, 2019. V. 22, N 2. P. 165-170.
Uteniazov A.K., Ismailov K.A. Effect of ultrasound irradiation on the electro-physical properties of the structure …
168
-4 -2 0 2 4 6 8
-0,3
-0,2
-0,1
0,0
0,1
0,2
0,3
0,4
s
,
e
V
U, V
a
-0,3 -0,2 -0,1 0,0 0,1 0,2 0,3 0,4
0,0
5,0x10
10
1,0x10
11
1,5x10
11
2,0x10
11
2,5x10
11
3,0x10
11
a
D
it
,
c
m
-2
V
-1
s, eV
treatment. After treatment, the surface potential reaches
the value of strong inversion ψS(inv) ≈ 0.74 eV, since the
Fermi level is EF ≈ 0.37 eV, and ψB ≈ 0.37 eV is the
difference between the Fermi level and the position of
the Fermi level in its own semiconductor Ei. It is known
that with strong inversion the surface potential has the
following analytical expression
iAS nNqkT ln2inv . (4)
-2,0 -1,5 -1,0 -0,5 0,0 0,5 1,0
-0,2
0,0
0,2
0,4
0,6
0,8
U, V
S
,
e
V b
-0,2 0,0 0,2 0,4 0,6 0,8
0,0
5,0x10
10
1,0x10
11
1,5x10
11
2,0x10
11
2,5x10
11
3,0x10
11
b
D
it
,
c
m
-2
e
V
-1
S, eV
Substituting the values ψS(inv) ≈ 0.74 eV, ni ≈
≈ 3∙10
13
cm
–3
in the formula (4) – the intrinsic
concentration of cubic modification of cadmium telluride
and T = 293 K, we obtain the concentration of ionized
acceptor centers NA ≈ 2.4∙10
12
cm
–3
, which is almost
equal to the concentration of equilibrium holes,
determined from the curves of 1/C
2
(U) dependences after
treatment. It follows that UST almost completely anneals
the surface states in the lower half of the semiconductor,
Fig. 3. The dependence of the surface potential ψS on the bias voltage U before (a) and after (b) treatment.
Fig. 4. The dependence of the effective density of surface states on the surface potential at the Al2O3–p-CdTe interface before (a) and
after (b) UST.
-2.0 -1.5 -1.0 -0.5 0 0.5 1.0
U, V
-4 -2 0 2 4 6 8
U, V
0.4
0.3
0.2
0.1
-0.2
-0.3
-0.2
0
0.8
0.6
0.4
-0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4
ΨS, eV
-0.2 0 0.2 0.4 0.6 0.8
ΨS, eV
3.0x10
11
2.5x10
11
2.0x10
11
1.5x10
11
1.0x10
11
5.0x10
10
3.0x10
11
2.5x10
11
2.0x10
11
1.5x10
11
1.0x10
11
5.0x10
10
SPQEO, 2019. V. 22, N 2. P. 165-170.
Uteniazov A.K., Ismailov K.A. Effect of ultrasound irradiation on the electro-physical properties of the structure …
169
0,01 0,1 1
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
b
3
2
1
4
3
2
I
J
,
A
/c
m
2
U, V
1
a
as a result of which they cease to influence the magnitude
of the surface potential.
Now, let us analyze the course of the dependence
Dit(ψS) obtained before the exposure to UST. As can be
seen in Fig. 4a, the density of surface states at the
interface of the Al–Al2O3–p-CdTe–Mo structure is
sufficiently low, it is equal to Dit = 3.4∙10
9
cm
–2
eV
–1
at
ψS = 0. The dependence of Dit(ψS) in the lower and in the
upper half of the forbidden band of semiconductor has a
different pattern. For example, when ψS changes from 0
up to 0.17 eV, the density of surface states slowly
decreases down to ≈2.4∙10
9
cm
–2
eV
–1
, and then it rapidly
increases and at ψS = 0.18 eV becomes equal to Dit ≈
≈ 5.7∙10
10
cm
–2
eV
–1
. Then, its value decreases and at ψS =
= 0.23 eV, reaches its minimum value equal to
≈1∙10
9
cm
–2
eV
–1
. Then, the density of surface states
begins to slowly decrease, and it becomes equal to
3∙10
9
cm
–2
eV
–1
at 0.36 eV. Such a complex dependence
Dit(ψS) shows that the surface charges at the interface are
non-uniformly distributed. The dependence Dit(ψS) in the
upper half of the band gap varies as follows. First, the
density of surface states slowly decreases, and then
rapidly increases and at ψS ≈ –0.22 eV becomes
~3∙10
11
cm
–2
eV
–1
. In the upper half of the forbidden band
of semiconductor, especially in the middle of the
forbidden band, there is a non-uniform charge
distribution in the space at the interface between the
dielectric (oxide) and semiconductor. Now let us analyze
the course of the dependence Dit(ψS) after the impact of
UST, which is shown in Fig. 4b.
The value of Dit in the lower half of the forbidden
band after exposure to UST within the limits of the
value ψS = 0…0.24 eV decreases more than twice
– from the value ~7.6∙10
9
cm
–2
eV
–1
down to the value
3.3∙10
9
cm
–2
eV
–1
, and then a peak appears at ψS = 0.26 eV
0,01 0,1 1
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
b
3
2
1
4
3
2
II
J
,
A
/c
m
2
U, V
1
a
and in it Dit ≈ 1.8∙10
10
cm
–2
eV
–1
. Further, the Dit-value
decreases relatively quickly to the value ψS = 0.49 eV,
where it is ~5.4∙10
9
cm
–2
eV
–1
. After that, the density of
surface states slowly decreases with a further increase
with the surface potential, and at ψS = 0.74 eV reaches the
value ~1.9∙10
9
cm
–2
eV
–1
.
In the upper half of the band gap, the value of
Dit(ψS) first increases to ψS = –0.04 eV, at which Dit ≈
≈ 2.4∙10
10
cm
–2
V
–1
, then begins to decrease to
~2.5∙10
9
cm
–2
V
–1
, and then rapidly increases, and at ψS ≈
≈ –0.16 eV it becomes equal to 2.6∙10
11
cm
–2
eV
–1
. The
above experimental results indicate that the oxide layer
of Al2O3 formed between aluminum (Al) and cadmium
telluride (CdTe) is of sufficient quality.
Apparently, UST annealing of surface states in the
upper half of the forbidden band of semiconductor at the
interface of the Al–Al2O3–p-CdTe–Mo structure leads to
a decrease in the surface recombination current, and this,
in turn, provides an increase in the number of injected
electrons from aluminum to the base; therefore, an
increase in the forward current after UST occurs. The
decrease in the reverse current is due to the annealing of
the surface states in the lower half of the forbidden band
of semiconductor, since it decreases the probability of
tunneling for non-equilibrium electrons accumulated at
the interface from base to metal.
Since the Al2O3 oxide layer is the main element in
the Al–Al2O3–p-CdTe–Mo structure under study, a
change in its properties, including the concentration of
defects and impurities in the dielectric-oxide layers
(surface states), should affect the electrophysical and
photoelectric properties of the entire structure. To
confirm this assumption, the current-voltage characte-
ristics of the structure in the forward and reverse direc-
tions before and after UST were investigated in [15]
(Fig. 5).
Fig. 5. Current-voltage characteristics of J~Uα type with different slopes in the forward (a) and reverse (b) current directions before
(I) and after (II) UST. Ia: 1 (1), 2 (2), 5.3 (3), 2 (4). Ib: 0.84 (1), 1 (2), 2 (3). IIa: 1 (1), 2 (2), 5 (3), 2 (4). IIb: 0.79 (1), 1 (2), 2 (3).
0.01 0.1 1 U, V
0.01 0.1 1 U, V
10
-1
10
-3
10
-5
10
-7
10
-1
10
-3
10
-5
10
-7
1
1
2
2
1
3
1
2
2
3
4
3
3
4
SPQEO, 2019. V. 22, N 2. P. 165-170.
Uteniazov A.K., Ismailov K.A. Effect of ultrasound irradiation on the electro-physical properties of the structure …
170
The study shows that there is a power dependence
of the current on the voltage type J = AU
α
, and the
exponent α values before and after UST differ a little. It
means that UST has almost no effect on the patterns of
current flow in both the forward and reverse directions.
At the same time, experimental results show that UST
leads to an increase in current in the forward branch and
to some decrease in the reverse branch of the I–U
characteristic with the same offset voltage.
For example, the forward and reverse currents in the
structure at the bias voltage U = ±6 V to UST are equal,
Iforw 7.9∙10
5
μA and Irev 167.73 μA, and their ratio at
the same bias voltage (rectification coefficient) K = 4707.
After UST, the above values for the same bias voltage
value, respectively, become equal to Iforw 1.03∙10
6
μA
and Irev 157.3 μA, and K = 6548. It follows that the
forward current increases by about 25…30%, and the
reverse current decreases by 6…9%, the rectification
coefficient (K) increases by 1.4 times after UST.
In conclusion, it can be noted that the MOS
structure under investigation has a rather low density of
surface states, especially in the lower half of the band gap
of semiconductor. However, the dependence Dit(ψS) in
the lower and upper halfs of the forbidden band has
different regularities. For example, the value of Dit in the
lower half of the forbidden band after exposure to UST
for the value ψS = 0…0.24 eV decreases more than twice
from ~7.6∙10
9
down to 3.3∙10
9
cm
–2
eV
–1
. UST
substantially eliminates surface charge heterogeneity at
the interface surface.
It has been ascertained that the annealing of surface
states by means of UST exposure leads to an increase in
the forward current by approximately 25…30% and to
the decrease in the reverse current by 6…9%.
References
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Uteniyazov Abatbay Kurbaniyazovich.
Doctor of Physics and Mathematics
(PhD), Associate Professor at the
Department of Semiconductor Physics of
Karakalpak State University, Uzbekistan,
Nukus. Author of more than 40 scientific
papers.
Ismailov Kanatbay Abdreymovich.
Doctor of Physics and Mathematics,
Professor, Head of Semiconductor
Physics Department of Karakalpak State
University, Uzbekistan, Nukus. Autor of
more than 300 scientifical works, among
them: 4 patents, 1 monograph, 10 text-
books and educational-methodological
manuals.
https://link.springer.com/article/10.1134/1.1187989
https://link.springer.com/article/10.1134/1.1187989
https://link.springer.com/article/10.1134/1.1859492
https://link.springer.com/article/10.1134/1.1859492
https://link.springer.com/article/10.1134/1.1859492
https://doi.org/10.1088/0022-3727/41/16/165107
https://www.wiley.com/en-us/search?pq=%7Crelevance%7Cauthor%3ASimon+M.+Sze
https://www.wiley.com/en-us/search?pq=%7Crelevance%7Cauthor%3AKwok+K.+Ng
|
| id | nasplib_isofts_kiev_ua-123456789-215469 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:52:47Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Uteniyazov, A.K. Ismailov, K.A. 2026-03-18T11:40:25Z 2019 Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe / A.K. Uteniyazov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 165-170. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 72.10.-d, 73.61.Ga, 73.40.Sx https://nasplib.isofts.kiev.ua/handle/123456789/215469 https://doi.org/10.15407/spqeo22.02.165 It has been shown that the density of surface states at the interface of the Al-Al₂O₃–p-CdTe–Mo structure is sufficiently low. It was found that at the interface, being in the thermodynamically equilibrium state, there is a bend of the edge of the allowed bands, as evidenced by the values of the surface potential, which are equal to 0.17 eV before and 0.25 eV after treatment. It has been ascertained that the surface states in the lower half of the band gap are almost completely annealed. It has been shown that ultrasonic treatment significantly affects the fluctuations of surface charges at the interface and eliminates unstable point defects located in the surface layer of the semiconductor. It has been established that the ultrasonic treatment has practically no effect on the patterns of current transfer, both in the forward and reverse directions. It has been shown that after the ultrasonic treatment, the forward current increases by about 25…30%, and the reverse current decreases by 6…9%; the rectification coefficient increases by 1.4 times. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe Article published earlier |
| spellingShingle | Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe Uteniyazov, A.K. Ismailov, K.A. Semiconductor physics |
| title | Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe |
| title_full | Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe |
| title_fullStr | Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe |
| title_full_unstemmed | Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe |
| title_short | Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe |
| title_sort | effect of ultrasound irradiation on the electro-physical properties of the structure of al-al₂o₃-cdte |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215469 |
| work_keys_str_mv | AT uteniyazovak effectofultrasoundirradiationontheelectrophysicalpropertiesofthestructureofalal2o3cdte AT ismailovka effectofultrasoundirradiationontheelectrophysicalpropertiesofthestructureofalal2o3cdte |