Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe

• Datum: 2019
• Hauptverfasser: Uteniyazov, A.K., Ismailov, K.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Schlagworte: Semiconductor physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215469
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe / A.K. Uteniyazov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 165-170. — Бібліогр.: 15 назв. — англ.

It has been shown that the density of surface states at the interface of the Al-Al₂O₃–p-CdTe–Mo structure is sufficiently low. It was found that at the interface, being in the thermodynamically equilibrium state, there is a bend of the edge of the allowed bands, as evidenced by the values of the sur...