Electronic and optical properties of β-HgS

Electronic and optical properties of β-HgS have been investigated using the density functional theory. The calculated lattice parameter is 6.043 Å, the bulk modulus is 57.17 GPa, and the equilibrium volume is 55.25 Å3. From the band structure, a direct band gap of 0.00002 eV was obtained, which agre...

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Bibliographic Details
Date:2019
Main Authors: Akinlami, J.O., Onyeanu, F.C.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/215471
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Electronic and optical properties of β-HgS / J.O. Akinlami, F.C. Onyeanu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 150-155. — Бібліогр.: 39 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:Electronic and optical properties of β-HgS have been investigated using the density functional theory. The calculated lattice parameter is 6.043 Å, the bulk modulus is 57.17 GPa, and the equilibrium volume is 55.25 Å3. From the band structure, a direct band gap of 0.00002 eV was obtained, which agreed well with other calculations. The plot of the dielectric constant against photon energy indicated several distinctive peaks. The imaginary part has a peak value of 34.99 at 0.47 eV, and the real part has a peak value of 29.65 at 0.40 eV. The values obtained for the electronic and optical properties of β-HgS are essentially important for applications in optoelectronics.
ISSN:1560-8034