Electronic and optical properties of β-HgS

Electronic and optical properties of β-HgS have been investigated using the density functional theory. The calculated lattice parameter is 6.043 Å, the bulk modulus is 57.17 GPa, and the equilibrium volume is 55.25 Å3. From the band structure, a direct band gap of 0.00002 eV was obtained, which agre...

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Дата:2019
Автори: Akinlami, J.O., Onyeanu, F.C.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/215471
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Electronic and optical properties of β-HgS / J.O. Akinlami, F.C. Onyeanu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 150-155. — Бібліогр.: 39 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Akinlami, J.O.
Onyeanu, F.C.
author_facet Akinlami, J.O.
Onyeanu, F.C.
citation_txt Electronic and optical properties of β-HgS / J.O. Akinlami, F.C. Onyeanu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 150-155. — Бібліогр.: 39 назв. — англ.
collection DSpace DC
description Electronic and optical properties of β-HgS have been investigated using the density functional theory. The calculated lattice parameter is 6.043 Å, the bulk modulus is 57.17 GPa, and the equilibrium volume is 55.25 Å3. From the band structure, a direct band gap of 0.00002 eV was obtained, which agreed well with other calculations. The plot of the dielectric constant against photon energy indicated several distinctive peaks. The imaginary part has a peak value of 34.99 at 0.47 eV, and the real part has a peak value of 29.65 at 0.40 eV. The values obtained for the electronic and optical properties of β-HgS are essentially important for applications in optoelectronics.
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publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Akinlami, J.O.
Onyeanu, F.C.
2026-03-18T11:40:58Z
2019
Electronic and optical properties of β-HgS / J.O. Akinlami, F.C. Onyeanu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 150-155. — Бібліогр.: 39 назв. — англ.
1560-8034
PACS: 42.79.Pw
https://nasplib.isofts.kiev.ua/handle/123456789/215471
https://doi.org/10.15407/spqeo22.02.150
Electronic and optical properties of β-HgS have been investigated using the density functional theory. The calculated lattice parameter is 6.043 Å, the bulk modulus is 57.17 GPa, and the equilibrium volume is 55.25 Å3. From the band structure, a direct band gap of 0.00002 eV was obtained, which agreed well with other calculations. The plot of the dielectric constant against photon energy indicated several distinctive peaks. The imaginary part has a peak value of 34.99 at 0.47 eV, and the real part has a peak value of 29.65 at 0.40 eV. The values obtained for the electronic and optical properties of β-HgS are essentially important for applications in optoelectronics.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Semiconductor physics
Electronic and optical properties of β-HgS
Article
published earlier
spellingShingle Electronic and optical properties of β-HgS
Akinlami, J.O.
Onyeanu, F.C.
Semiconductor physics
title Electronic and optical properties of β-HgS
title_full Electronic and optical properties of β-HgS
title_fullStr Electronic and optical properties of β-HgS
title_full_unstemmed Electronic and optical properties of β-HgS
title_short Electronic and optical properties of β-HgS
title_sort electronic and optical properties of β-hgs
topic Semiconductor physics
topic_facet Semiconductor physics
url https://nasplib.isofts.kiev.ua/handle/123456789/215471
work_keys_str_mv AT akinlamijo electronicandopticalpropertiesofβhgs
AT onyeanufc electronicandopticalpropertiesofβhgs