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Electronic and optical properties of β-HgS

Electronic and optical properties of β-HgS have been investigated using the density functional theory. The calculated lattice parameter is 6.043 Å, the bulk modulus is 57.17 GPa, and the equilibrium volume is 55.25 Å3. From the band structure, a direct band gap of 0.00002 eV was obtained, which agre...

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Datum:	2019
Hauptverfasser:	Akinlami, J.O., Onyeanu, F.C.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215471
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Electronic and optical properties of β-HgS / J.O. Akinlami, F.C. Onyeanu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 150-155. — Бібліогр.: 39 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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