Electronic and optical properties of β-HgS

• Date: 2019
• ISSN: 1560-8034
• Main Authors: Akinlami, J.O., Onyeanu, F.C.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Subjects: Semiconductor physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215471
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Electronic and optical properties of β-HgS / J.O. Akinlami, F.C. Onyeanu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 2. — С. 150-155. — Бібліогр.: 39 назв. — англ.

Electronic and optical properties of β-HgS have been investigated using the density functional theory. The calculated lattice parameter is 6.043 Å, the bulk modulus is 57.17 GPa, and the equilibrium volume is 55.25 Å3. From the band structure, a direct band gap of 0.00002 eV was obtained, which agre...