Nanosized levels of the self-organized structures in the non-crystalline semiconductors As-S(Se) system

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2019
• ISSN: 1560-8034
• Hauptverfasser: Mar'yan, M.I., Yurkovych, N.V., Seben, V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Schlagworte: Hetero- and low-dimensional structures
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215497
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Nanosized levels of the self-organized structures in the non-crystalline semiconductors As-S(Se) system / M.I. Mar'yan, N.V. Yurkovych, V. Seben // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 3. — С. 299-309. — Бібліогр.: 27 назв. — англ.

A synergetic model of the transition to a non-crystalline state is proposed, which enables us to investigate the temperature dependence of the microscopic parameters (mean-square displacements, the proportion of atoms in soft atomic configurations, power constants) under the influence of the external control parameter – the cooling velocity. Their analysis has been performed on the basis of experimental research for non-crystalline semiconductors of the system As–S(Se). It has been shown that the formation of self-organized structures in non-crystalline solids is carried out in accordance with the technological conditions of obtaining as a method of the system self-organization. The dependence of the period and lifetime of self-organized structures on the cooling velocity has been studied. The established value of the period of spatial inhomogeneity Lc ≈10…10² Å correlates with the nanosized middle order in non-crystalline materials of the system As-S(Se) and decreases with increasing the cooling velocity.