Nanosized levels of the self-organized structures in the non-crystalline semiconductors As-S(Se) system

A synergetic model of the transition to a non-crystalline state is proposed, which enables us to investigate the temperature dependence of the microscopic parameters (mean-square displacements, the proportion of atoms in soft atomic configurations, power constants) under the influence of the externa...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2019
Main Authors: Mar'yan, M.I., Yurkovych, N.V., Seben, V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/215497
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Nanosized levels of the self-organized structures in the non-crystalline semiconductors As-S(Se) system / M.I. Mar'yan, N.V. Yurkovych, V. Seben // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 3. — С. 299-309. — Бібліогр.: 27 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Mar'yan, M.I.
Yurkovych, N.V.
Seben, V.
author_facet Mar'yan, M.I.
Yurkovych, N.V.
Seben, V.
citation_txt Nanosized levels of the self-organized structures in the non-crystalline semiconductors As-S(Se) system / M.I. Mar'yan, N.V. Yurkovych, V. Seben // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 3. — С. 299-309. — Бібліогр.: 27 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description A synergetic model of the transition to a non-crystalline state is proposed, which enables us to investigate the temperature dependence of the microscopic parameters (mean-square displacements, the proportion of atoms in soft atomic configurations, power constants) under the influence of the external control parameter – the cooling velocity. Their analysis has been performed on the basis of experimental research for non-crystalline semiconductors of the system As–S(Se). It has been shown that the formation of self-organized structures in non-crystalline solids is carried out in accordance with the technological conditions of obtaining as a method of the system self-organization. The dependence of the period and lifetime of self-organized structures on the cooling velocity has been studied. The established value of the period of spatial inhomogeneity Lc ≈10…10² Å correlates with the nanosized middle order in non-crystalline materials of the system As-S(Se) and decreases with increasing the cooling velocity.
first_indexed 2026-03-23T18:54:07Z
format Article
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2026-03-23T18:54:07Z
publishDate 2019
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Mar'yan, M.I.
Yurkovych, N.V.
Seben, V.
2026-03-19T10:43:18Z
2019
Nanosized levels of the self-organized structures in the non-crystalline semiconductors As-S(Se) system / M.I. Mar'yan, N.V. Yurkovych, V. Seben // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 3. — С. 299-309. — Бібліогр.: 27 назв. — англ.
1560-8034
PACS: 68.35.bj, 78.66.Jg, 89.75.Fb
https://nasplib.isofts.kiev.ua/handle/123456789/215497
https://doi.org/10.15407/spqeo22.03.299
A synergetic model of the transition to a non-crystalline state is proposed, which enables us to investigate the temperature dependence of the microscopic parameters (mean-square displacements, the proportion of atoms in soft atomic configurations, power constants) under the influence of the external control parameter – the cooling velocity. Their analysis has been performed on the basis of experimental research for non-crystalline semiconductors of the system As–S(Se). It has been shown that the formation of self-organized structures in non-crystalline solids is carried out in accordance with the technological conditions of obtaining as a method of the system self-organization. The dependence of the period and lifetime of self-organized structures on the cooling velocity has been studied. The established value of the period of spatial inhomogeneity Lc ≈10…10² Å correlates with the nanosized middle order in non-crystalline materials of the system As-S(Se) and decreases with increasing the cooling velocity.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Hetero- and low-dimensional structures
Nanosized levels of the self-organized structures in the non-crystalline semiconductors As-S(Se) system
Article
published earlier
spellingShingle Nanosized levels of the self-organized structures in the non-crystalline semiconductors As-S(Se) system
Mar'yan, M.I.
Yurkovych, N.V.
Seben, V.
Hetero- and low-dimensional structures
title Nanosized levels of the self-organized structures in the non-crystalline semiconductors As-S(Se) system
title_full Nanosized levels of the self-organized structures in the non-crystalline semiconductors As-S(Se) system
title_fullStr Nanosized levels of the self-organized structures in the non-crystalline semiconductors As-S(Se) system
title_full_unstemmed Nanosized levels of the self-organized structures in the non-crystalline semiconductors As-S(Se) system
title_short Nanosized levels of the self-organized structures in the non-crystalline semiconductors As-S(Se) system
title_sort nanosized levels of the self-organized structures in the non-crystalline semiconductors as-s(se) system
topic Hetero- and low-dimensional structures
topic_facet Hetero- and low-dimensional structures
url https://nasplib.isofts.kiev.ua/handle/123456789/215497
work_keys_str_mv AT maryanmi nanosizedlevelsoftheselforganizedstructuresinthenoncrystallinesemiconductorsasssesystem
AT yurkovychnv nanosizedlevelsoftheselforganizedstructuresinthenoncrystallinesemiconductorsasssesystem
AT sebenv nanosizedlevelsoftheselforganizedstructuresinthenoncrystallinesemiconductorsasssesystem