Mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate
We present experimental research on mechanical strains in the structure consisting of an array of silicon nanowires grown using the metal-enhanced CVD technique on boron-doped Si(111) and Si(100) substrates. Using the electron beam induced current on a cleaved substrate, electron spin resonance, and...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2019 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215498 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate / A.I. Klimovskaya, B.D. Shanina, A.S. Nikolenko, P.M. Lytvyn, Yu.Yu. Kalashnyk, V.V. Strelchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 3. — С. 293-298. — Бібліогр.: 23 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862660971215978496 |
|---|---|
| author | Klimovskaya, A.I. Shanina, B.D. Nikolenko, A.S. Lytvyn, P.M. Kalashnyk, Yu.Yu. Strelchuk, V.V. |
| author_facet | Klimovskaya, A.I. Shanina, B.D. Nikolenko, A.S. Lytvyn, P.M. Kalashnyk, Yu.Yu. Strelchuk, V.V. |
| citation_txt | Mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate / A.I. Klimovskaya, B.D. Shanina, A.S. Nikolenko, P.M. Lytvyn, Yu.Yu. Kalashnyk, V.V. Strelchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 3. — С. 293-298. — Бібліогр.: 23 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We present experimental research on mechanical strains in the structure consisting of an array of silicon nanowires grown using the metal-enhanced CVD technique on boron-doped Si(111) and Si(100) substrates. Using the electron beam induced current on a cleaved substrate, electron spin resonance, and confocal micro-Raman spectroscopy, we found that growth of silicon nanowires on a native (silicon) substrate gives rise to a strain both of the substrate and the grown nanowires, too. An occurrence of the strain in the substrate was revealed by the initiation of the electron spin resonance signal from boron atoms, which is not usually resolved in unstressed silicon due to the complex energy structure at the top of the valence band. Furthermore, the strain of the substrate was proved additionally by observation of the spatial dependence of the current induced by the electron beam on a cleaved substrate, and by the spectral shift of the Raman peak related to 3С-Si near the interface “substrate – array of nanowires”. Mechanical strain in the nanowires was more pronounced in the Raman spectra, which also revealed their complex crystal structure consisting of cubic and hexagonal phases of silicon. A model of the strain rise is discussed.
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| first_indexed | 2026-03-23T18:54:08Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215498 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:54:08Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Klimovskaya, A.I. Shanina, B.D. Nikolenko, A.S. Lytvyn, P.M. Kalashnyk, Yu.Yu. Strelchuk, V.V. 2026-03-19T10:43:24Z 2019 Mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate / A.I. Klimovskaya, B.D. Shanina, A.S. Nikolenko, P.M. Lytvyn, Yu.Yu. Kalashnyk, V.V. Strelchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 3. — С. 293-298. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS: 61.46.Km, 78.30.Am, 81.07.-b, 81.07.Gf https://nasplib.isofts.kiev.ua/handle/123456789/215498 https://doi.org/10.15407/spqeo22.03.293 We present experimental research on mechanical strains in the structure consisting of an array of silicon nanowires grown using the metal-enhanced CVD technique on boron-doped Si(111) and Si(100) substrates. Using the electron beam induced current on a cleaved substrate, electron spin resonance, and confocal micro-Raman spectroscopy, we found that growth of silicon nanowires on a native (silicon) substrate gives rise to a strain both of the substrate and the grown nanowires, too. An occurrence of the strain in the substrate was revealed by the initiation of the electron spin resonance signal from boron atoms, which is not usually resolved in unstressed silicon due to the complex energy structure at the top of the valence band. Furthermore, the strain of the substrate was proved additionally by observation of the spatial dependence of the current induced by the electron beam on a cleaved substrate, and by the spectral shift of the Raman peak related to 3С-Si near the interface “substrate – array of nanowires”. Mechanical strain in the nanowires was more pronounced in the Raman spectra, which also revealed their complex crystal structure consisting of cubic and hexagonal phases of silicon. A model of the strain rise is discussed. This research was financially supported by the STCU project # 4080. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Hetero- and low-dimensional structures Mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate Article published earlier |
| spellingShingle | Mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate Klimovskaya, A.I. Shanina, B.D. Nikolenko, A.S. Lytvyn, P.M. Kalashnyk, Yu.Yu. Strelchuk, V.V. Hetero- and low-dimensional structures |
| title | Mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate |
| title_full | Mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate |
| title_fullStr | Mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate |
| title_full_unstemmed | Mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate |
| title_short | Mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate |
| title_sort | mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate |
| topic | Hetero- and low-dimensional structures |
| topic_facet | Hetero- and low-dimensional structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215498 |
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