Mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2019
• Hauptverfasser: Klimovskaya, A.I., Shanina, B.D., Nikolenko, A.S., Lytvyn, P.M., Kalashnyk, Yu.Yu., Strelchuk, V.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Schlagworte: Hetero- and low-dimensional structures
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215498
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Mechanical strain in the structure of an array of silicon nanowires grown on a silicon substrate / A.I. Klimovskaya, B.D. Shanina, A.S. Nikolenko, P.M. Lytvyn, Yu.Yu. Kalashnyk, V.V. Strelchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 3. — С. 293-298. — Бібліогр.: 23 назв. — англ.

We present experimental research on mechanical strains in the structure consisting of an array of silicon nanowires grown using the metal-enhanced CVD technique on boron-doped Si(111) and Si(100) substrates. Using the electron beam induced current on a cleaved substrate, electron spin resonance, and...