Key parameters of commercial silicon solar cells with rear metallization

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2019
• Hauptverfasser: Sachenko, A.V., Kostylyov, V.P., Vlasyuk, V.M., Korkishko, R.M., Sokolovskyi, I.O., Chernenko, V.V., Dvernikov, B.F., Serba, O.A., Evstigneev, M.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Schlagworte: Semiconductor physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215500
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Key parameters of commercial silicon solar cells with rear metallization / A.V. Sachenko, V.P. Kostylyov, V.M. Vlasyuk, R.M. Korkishko, I.O. Sokolovskyi, V.V. Chernenko, B.F. Dvernikov, O.A. Serba, M.A. Evstigneev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 3. — С. 277-284. — Бібліогр.: 18 назв. — англ.

The key parameters of silicon solar cells with back contact and rear metallization (SC-BC), such as the short-circuit current, open-circuit voltage, and photoconversion efficiency, are modeled theoretically. Among other recombination channels, the model accounts for the non-radiative Auger recombina...