Numerical analysis of aluminum nanoparticle influence on the characteristics of a thin-film solar cell
The influence of parameters of an aluminum nanoparticle layer on the characteristics of a thin-film amorphous silicon solar cell has been studied using computer simulation methods. A design with a regular arrangement of nanoparticles both on the front and back sides of the solar cell has been consid...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2019 |
| ISSN: | 1560-8034 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215588 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Numerical analysis of aluminum nanoparticle influence on the characteristics of a thin-film solar cell / A.B. Gnilenko, S.V. Plaksin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 424-429. — Бібліогр.: 13 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The influence of parameters of an aluminum nanoparticle layer on the characteristics of a thin-film amorphous silicon solar cell has been studied using computer simulation methods. A design with a regular arrangement of nanoparticles both on the front and back sides of the solar cell has been considered. The distribution of photogeneration rate in the amorphous silicon layer has been obtained for different values of the nanoparticle radius. The effects of nanoparticle radius and nanoparticle spacing on the electrical characteristics of a solar cell have been analyzed. It has been shown that, with optimal nanoparticle parameters, the efficiency of solar cells can be significantly increased.
|
|---|---|
| ISSN: | 1560-8034 |