Low temperature charge transport in arrays of single-walled carbon nanotube bundles with radiation-induced defects

Electric transport properties and magnetoresistance (MR) of the array of metallic single-wall carbon nanotube bundles irradiated by the electron flux with the energy close to 1 MeV or Co⁶⁰ gamma quanta have been investigated within the temperature range T = 1.8…200 K and in the magnetic fields up to...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2019
Main Authors: Vainberg, V.V., Poroshin, V.N., Pylypchuk, O.S., Tripachko, N.A., Yaskovets, I.I.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/215589
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Low temperature charge transport in arrays of single-walled carbon nanotube bundles with radiation-induced defects / V.V. Vainberg, V.N. Poroshin, O.S. Pylypchuk, N.A. Tripachko, I.I. Yaskovets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 418-423. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862617431544954880
author Vainberg, V.V.
Poroshin, V.N.
Pylypchuk, O.S.
Tripachko, N.A.
Yaskovets, I.I.
author_facet Vainberg, V.V.
Poroshin, V.N.
Pylypchuk, O.S.
Tripachko, N.A.
Yaskovets, I.I.
citation_txt Low temperature charge transport in arrays of single-walled carbon nanotube bundles with radiation-induced defects / V.V. Vainberg, V.N. Poroshin, O.S. Pylypchuk, N.A. Tripachko, I.I. Yaskovets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 418-423. — Бібліогр.: 18 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Electric transport properties and magnetoresistance (MR) of the array of metallic single-wall carbon nanotube bundles irradiated by the electron flux with the energy close to 1 MeV or Co⁶⁰ gamma quanta have been investigated within the temperature range T = 1.8…200 K and in the magnetic fields up to 5 T. The power-law behavior of the conduction vs temperature was observed within the range 50 to 200 K, which is typical for conduction of quasi-one-dimensional systems in the model of the electron gas as the Luttinger liquid. The change in power exponent α with the radiation dose and its deviation as compared to α for the non-irradiated samples is related to changing the number of conduction channels in the bundles as a consequence of the radiation defects appearing. At temperatures below 50 K, the Mott three-dimensional hopping conduction is realized. Using the measured dependence of conduction on the temperature and electric field, the density of electron states in the vicinity of the Fermi level, which participate in the hopping charge transport, and the localization length of charge carriers in these states have been determined. These parameters determining the hopping mechanism of the charge transport are noted to depend on the radiation dose. The magnetoresistance in the Mott-type hopping conduction region was negative in the whole range of magnetic fields, while at the large fields an upturn to the positive change was observed. The mechanisms of the negative and positive MR components are discussed.
first_indexed 2026-03-23T18:58:48Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-215589
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2026-03-23T19:08:15Z
publishDate 2019
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Vainberg, V.V.
Poroshin, V.N.
Pylypchuk, O.S.
Tripachko, N.A.
Yaskovets, I.I.
2026-03-20T08:44:02Z
2019
Low temperature charge transport in arrays of single-walled carbon nanotube bundles with radiation-induced defects / V.V. Vainberg, V.N. Poroshin, O.S. Pylypchuk, N.A. Tripachko, I.I. Yaskovets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 418-423. — Бібліогр.: 18 назв. — англ.
1560-8034
PACS: 72.15.Gd, 72.20.Ee, 72.20.Ht, 73.63.−b, 73.63.Fg
https://nasplib.isofts.kiev.ua/handle/123456789/215589
https://doi.org/10.15407/spqeo22.04.418
Electric transport properties and magnetoresistance (MR) of the array of metallic single-wall carbon nanotube bundles irradiated by the electron flux with the energy close to 1 MeV or Co⁶⁰ gamma quanta have been investigated within the temperature range T = 1.8…200 K and in the magnetic fields up to 5 T. The power-law behavior of the conduction vs temperature was observed within the range 50 to 200 K, which is typical for conduction of quasi-one-dimensional systems in the model of the electron gas as the Luttinger liquid. The change in power exponent α with the radiation dose and its deviation as compared to α for the non-irradiated samples is related to changing the number of conduction channels in the bundles as a consequence of the radiation defects appearing. At temperatures below 50 K, the Mott three-dimensional hopping conduction is realized. Using the measured dependence of conduction on the temperature and electric field, the density of electron states in the vicinity of the Fermi level, which participate in the hopping charge transport, and the localization length of charge carriers in these states have been determined. These parameters determining the hopping mechanism of the charge transport are noted to depend on the radiation dose. The magnetoresistance in the Mott-type hopping conduction region was negative in the whole range of magnetic fields, while at the large fields an upturn to the positive change was observed. The mechanisms of the negative and positive MR components are discussed.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Hetero- and low-dimensional structures
Low temperature charge transport in arrays of single-walled carbon nanotube bundles with radiation-induced defects
Article
published earlier
spellingShingle Low temperature charge transport in arrays of single-walled carbon nanotube bundles with radiation-induced defects
Vainberg, V.V.
Poroshin, V.N.
Pylypchuk, O.S.
Tripachko, N.A.
Yaskovets, I.I.
Hetero- and low-dimensional structures
title Low temperature charge transport in arrays of single-walled carbon nanotube bundles with radiation-induced defects
title_full Low temperature charge transport in arrays of single-walled carbon nanotube bundles with radiation-induced defects
title_fullStr Low temperature charge transport in arrays of single-walled carbon nanotube bundles with radiation-induced defects
title_full_unstemmed Low temperature charge transport in arrays of single-walled carbon nanotube bundles with radiation-induced defects
title_short Low temperature charge transport in arrays of single-walled carbon nanotube bundles with radiation-induced defects
title_sort low temperature charge transport in arrays of single-walled carbon nanotube bundles with radiation-induced defects
topic Hetero- and low-dimensional structures
topic_facet Hetero- and low-dimensional structures
url https://nasplib.isofts.kiev.ua/handle/123456789/215589
work_keys_str_mv AT vainbergvv lowtemperaturechargetransportinarraysofsinglewalledcarbonnanotubebundleswithradiationinduceddefects
AT poroshinvn lowtemperaturechargetransportinarraysofsinglewalledcarbonnanotubebundleswithradiationinduceddefects
AT pylypchukos lowtemperaturechargetransportinarraysofsinglewalledcarbonnanotubebundleswithradiationinduceddefects
AT tripachkona lowtemperaturechargetransportinarraysofsinglewalledcarbonnanotubebundleswithradiationinduceddefects
AT yaskovetsii lowtemperaturechargetransportinarraysofsinglewalledcarbonnanotubebundleswithradiationinduceddefects