Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2019
• Автор: Latreche, A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Теми: Semiconductor Physics
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/215592
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes / A. Latreche // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 397-403. — Бібліогр.: 40 назв. — англ.

In order to determine the temperature dependence of the reverse transition voltage between thermionic emission and tunneling mechanisms, a numerical method has been applied for β-Ga₂O₃ Schottky barrier diodes. The main idea of this method is based on the intersection of the I–V curves of thermionic emission and the tunneling process. The reverse transition voltage increases for low and high temperatures, while it decreases at intermediate temperatures. This means that an unexpected peak in Padovani–Stratton’s condition is observed at low temperatures. The reverse transition voltage increases linearly with increasing barrier height and the inverse of the doping concentration. An analytical model has been proposed to predict the dependence of the reverse transition voltage on temperature, doping concentration, and barrier height for β-Ga₂O₃ Schottky barrier diodes. This model is well tested on experimental reverse transition voltage data previously published in the literature for β-Ga₂O₃ SBDs.