Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes
In order to determine the temperature dependence of the reverse transition voltage between thermionic emission and tunneling mechanisms, a numerical method has been applied for β-Ga₂O₃ Schottky barrier diodes. The main idea of this method is based on the intersection of the I–V curves of thermionic...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2019 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215592 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes / A. Latreche // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 397-403. — Бібліогр.: 40 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862718017705607168 |
|---|---|
| author | Latreche, A. |
| author_facet | Latreche, A. |
| citation_txt | Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes / A. Latreche // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 397-403. — Бібліогр.: 40 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In order to determine the temperature dependence of the reverse transition voltage between thermionic emission and tunneling mechanisms, a numerical method has been applied for β-Ga₂O₃ Schottky barrier diodes. The main idea of this method is based on the intersection of the I–V curves of thermionic emission and the tunneling process. The reverse transition voltage increases for low and high temperatures, while it decreases at intermediate temperatures. This means that an unexpected peak in Padovani–Stratton’s condition is observed at low temperatures. The reverse transition voltage increases linearly with increasing barrier height and the inverse of the doping concentration. An analytical model has been proposed to predict the dependence of the reverse transition voltage on temperature, doping concentration, and barrier height for β-Ga₂O₃ Schottky barrier diodes. This model is well tested on experimental reverse transition voltage data previously published in the literature for β-Ga₂O₃ SBDs.
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| first_indexed | 2026-03-23T18:58:51Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215592 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T19:08:20Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Latreche, A. 2026-03-20T08:45:03Z 2019 Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes / A. Latreche // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 397-403. — Бібліогр.: 40 назв. — англ. 1560-8034 PACS: 85.30.De, 85.30.Kk, 85.30.Mn https://nasplib.isofts.kiev.ua/handle/123456789/215592 https://doi.org/10.15407/spqeo22.04.397 In order to determine the temperature dependence of the reverse transition voltage between thermionic emission and tunneling mechanisms, a numerical method has been applied for β-Ga₂O₃ Schottky barrier diodes. The main idea of this method is based on the intersection of the I–V curves of thermionic emission and the tunneling process. The reverse transition voltage increases for low and high temperatures, while it decreases at intermediate temperatures. This means that an unexpected peak in Padovani–Stratton’s condition is observed at low temperatures. The reverse transition voltage increases linearly with increasing barrier height and the inverse of the doping concentration. An analytical model has been proposed to predict the dependence of the reverse transition voltage on temperature, doping concentration, and barrier height for β-Ga₂O₃ Schottky barrier diodes. This model is well tested on experimental reverse transition voltage data previously published in the literature for β-Ga₂O₃ SBDs. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor Physics Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes Article published earlier |
| spellingShingle | Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes Latreche, A. Semiconductor Physics |
| title | Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes |
| title_full | Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes |
| title_fullStr | Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes |
| title_full_unstemmed | Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes |
| title_short | Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes |
| title_sort | conduction mechanisms of the reverse leakage current of β-ga₂o₃ schottky barrier diodes |
| topic | Semiconductor Physics |
| topic_facet | Semiconductor Physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215592 |
| work_keys_str_mv | AT latrechea conductionmechanismsofthereverseleakagecurrentofβga2o3schottkybarrierdiodes |