Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2019
• ISSN: 1560-8034
• 1. Verfasser: Latreche, A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Schlagworte: Semiconductor Physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215592
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes / A. Latreche // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 397-403. — Бібліогр.: 40 назв. — англ.

In order to determine the temperature dependence of the reverse transition voltage between thermionic emission and tunneling mechanisms, a numerical method has been applied for β-Ga₂O₃ Schottky barrier diodes. The main idea of this method is based on the intersection of the I–V curves of thermionic...