Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2019
• Hauptverfasser: Borcha, M.D., Solodkyi, M.S., Balovsyak, S.V., Tkach, V.M., Hutsuliak, I.I., Kuzmin, A.R., Tkach, O.O., Kladko, V.P., Gudymenko, O.Yo., Liubchenko, О.І., Swiatek, Z.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Schlagworte: Semiconductor Physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215595
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data / M.D. Borcha, M.S. Solodkyi, S.V. Balovsyak, V.M. Tkach, I.I. Hutsuliak, A.R. Kuzmin, O.O. Tkach, V.P. Kladko, O.Yo. Gudymenko, О.І. Liubchenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 381-386. — Бібліогр.: 26 назв. — англ.

The structural homogeneity and degree of perfection inherent to mosaic Ge:Sb samples were investigated. The modified methods for analyzing diffraction images of backscattered electrons (Kikuchi patterns) were used to reduce the influence of instrumental factors. The root-mean-square deformations in the local regions of separate grains and at the boundaries between them were determined using the value of the spatial frequency of the energy spectrum of the two-dimensional Fourier transform of Kikuchi patterns. It is shown that the maximum values of deformations (∼3.5⋅10⁻³) are typical for local regions, which are usually located at the boundaries between subgrains. X-ray studies confirm the obtained values of root-mean-square deformations.