Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data
The structural homogeneity and degree of perfection inherent to mosaic Ge:Sb samples were investigated. The modified methods for analyzing diffraction images of backscattered electrons (Kikuchi patterns) were used to reduce the influence of instrumental factors. The root-mean-square deformations in...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2019 |
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215595 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data / M.D. Borcha, M.S. Solodkyi, S.V. Balovsyak, V.M. Tkach, I.I. Hutsuliak, A.R. Kuzmin, O.O. Tkach, V.P. Kladko, O.Yo. Gudymenko, О.І. Liubchenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 381-386. — Бібліогр.: 26 назв. — англ. |