Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2019
• Hauptverfasser: Borcha, M.D., Solodkyi, M.S., Balovsyak, S.V., Tkach, V.M., Hutsuliak, I.I., Kuzmin, A.R., Tkach, O.O., Kladko, V.P., Gudymenko, O.Yo., Liubchenko, О.І., Swiatek, Z.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Schlagworte: Semiconductor Physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215595
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data / M.D. Borcha, M.S. Solodkyi, S.V. Balovsyak, V.M. Tkach, I.I. Hutsuliak, A.R. Kuzmin, O.O. Tkach, V.P. Kladko, O.Yo. Gudymenko, О.І. Liubchenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 381-386. — Бібліогр.: 26 назв. — англ.

The structural homogeneity and degree of perfection inherent to mosaic Ge:Sb samples were investigated. The modified methods for analyzing diffraction images of backscattered electrons (Kikuchi patterns) were used to reduce the influence of instrumental factors. The root-mean-square deformations in...