Influence of cation substitution on the mechanical properties of (Cu₁₋ₓAgₓ)₇GeSe₅I mixed crystals and composites on their base

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2020
• Hauptverfasser: Bendak, A.V., Skubenych, K.V., Pogodin, A.I., Bilanych, V.S., Kranjcec, M., Studenyak, I.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Schlagworte: Semiconductor Physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215665
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of cation substitution on the mechanical properties of (Cu₁₋ₓAgₓ)₇GeSe₅I mixed crystals and composites on their base / A.V. Bendak, K.V. Skubenych, A.I. Pogodin, V.S. Bilanych, M. Kranjcec, I.P. Studenyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 1. — С. 37-40. — Бібліогр.: 16 назв. — англ.

Microhardness of (Cu₁₋ₓAgₓ)₇GeSe₅I mixed crystals and composites on their base was investigated using the Vickers indenter at room temperature. (Cu₁₋ₓAgₓ)₇GeSe₅I mixed crystals were obtained using the Bridgman–Stockbarger method. Composites on their base were prepared as a pressed mixture of (Cu₁₋ₓAgₓ)₇GeSe₅I micropowder and ethylene-vinyl acetate polymer in a 90:10 concentration ratio, respectively. Dependences of microhardness versus the indenter penetration depth have been analyzed. Influence of Cu⁺→Ag⁺ isovalent cation substitution on the microhardness of (Cu₁₋ₓAgₓ)₇GeSe₅I mixed crystals and composites on their base has been studied.