Shunt current in InAs diffused photodiodes
The shunt current has been investigated in ⁺- type InAs diffused photodiodes. The mesastructures were prepared by etching in Br₂-HBr solution and sequentially etched in CP-4 and in a lactic acid-based etchant. The surface of mesastructures was passivated in an alcohol solution of Na₂S. After each ch...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2020 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2020
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215708 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Shunt current in InAs diffused photodiodes / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 208-213. — Бібліогр.: 23 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The shunt current has been investigated in ⁺- type InAs diffused photodiodes. The mesastructures were prepared by etching in Br₂-HBr solution and sequentially etched in CP-4 and in a lactic acid-based etchant. The surface of mesastructures was passivated in an alcohol solution of Na₂S. After each chemical treatment, the current-voltage and capacitance-voltage characteristics were measured as functions of bias voltage and temperature. It has been shown that the shunt current contains ohmic and non-ohmic components. Evidence has been obtained that the non-ohmic shunt current originates from the space-charge limited current in the surface inversion layer and the trap-assisted tunneling current in the bulk.
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| ISSN: | 1560-8034 |