Shunt current in InAs diffused photodiodes
The shunt current has been investigated in ⁺- type InAs diffused photodiodes. The mesastructures were prepared by etching in Br₂-HBr solution and sequentially etched in CP-4 and in a lactic acid-based etchant. The surface of mesastructures was passivated in an alcohol solution of Na₂S. After each ch...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2020 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2020
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215708 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Shunt current in InAs diffused photodiodes / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 208-213. — Бібліогр.: 23 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860956235693555712 |
|---|---|
| author | Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| author_facet | Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| citation_txt | Shunt current in InAs diffused photodiodes / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 208-213. — Бібліогр.: 23 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The shunt current has been investigated in ⁺- type InAs diffused photodiodes. The mesastructures were prepared by etching in Br₂-HBr solution and sequentially etched in CP-4 and in a lactic acid-based etchant. The surface of mesastructures was passivated in an alcohol solution of Na₂S. After each chemical treatment, the current-voltage and capacitance-voltage characteristics were measured as functions of bias voltage and temperature. It has been shown that the shunt current contains ohmic and non-ohmic components. Evidence has been obtained that the non-ohmic shunt current originates from the space-charge limited current in the surface inversion layer and the trap-assisted tunneling current in the bulk.
|
| first_indexed | 2026-03-29T01:02:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215708 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-29T01:02:45Z |
| publishDate | 2020 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. 2026-03-26T08:45:24Z 2020 Shunt current in InAs diffused photodiodes / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 208-213. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS: 73.40.Gk, 73.40.Kp https://nasplib.isofts.kiev.ua/handle/123456789/215708 https://doi.org/10.15407/spqeo23.02.208 The shunt current has been investigated in ⁺- type InAs diffused photodiodes. The mesastructures were prepared by etching in Br₂-HBr solution and sequentially etched in CP-4 and in a lactic acid-based etchant. The surface of mesastructures was passivated in an alcohol solution of Na₂S. After each chemical treatment, the current-voltage and capacitance-voltage characteristics were measured as functions of bias voltage and temperature. It has been shown that the shunt current contains ohmic and non-ohmic components. Evidence has been obtained that the non-ohmic shunt current originates from the space-charge limited current in the surface inversion layer and the trap-assisted tunneling current in the bulk. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Sensors Shunt current in InAs diffused photodiodes Article published earlier |
| spellingShingle | Shunt current in InAs diffused photodiodes Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. Sensors |
| title | Shunt current in InAs diffused photodiodes |
| title_full | Shunt current in InAs diffused photodiodes |
| title_fullStr | Shunt current in InAs diffused photodiodes |
| title_full_unstemmed | Shunt current in InAs diffused photodiodes |
| title_short | Shunt current in InAs diffused photodiodes |
| title_sort | shunt current in inas diffused photodiodes |
| topic | Sensors |
| topic_facet | Sensors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215708 |
| work_keys_str_mv | AT sukachav shuntcurrentininasdiffusedphotodiodes AT tetyorkinvv shuntcurrentininasdiffusedphotodiodes AT tkachukai shuntcurrentininasdiffusedphotodiodes |