Shunt current in InAs diffused photodiodes
The shunt current has been investigated in ⁺- type InAs diffused photodiodes. The mesastructures were prepared by etching in Br₂-HBr solution and sequentially etched in CP-4 and in a lactic acid-based etchant. The surface of mesastructures was passivated in an alcohol solution of Na₂S. After each ch...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2020 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2020
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215708 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Shunt current in InAs diffused photodiodes / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 208-213. — Бібліогр.: 23 назв. — англ. |
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