Light-emitting properties of BN synthesized by different techniques

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2020
• Hauptverfasser: Rudko, G.Yu., Sartinska, L.L., Isaieva, O.F., Gule, E.G., Eren, T., Altay, E.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Schlagworte: Optics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215710
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Light-emitting properties of BN synthesized by different techniques / G.Yu. Rudko, L.L. Sartinska, O.F. Isaieva, E.G. Gule, T. Eren, E. Altay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 193-200. — Бібліогр.: 43 назв. — англ.

Light-emitting properties of boron nitride powders of different morphologies grown using various techniques have been studied. All samples were hexagonal BN (h-BN), while the content of impurity phases varied considerably. The wide photoluminescence band in the visible range has been observed. h-BN synthesized using the carbothermal reduction method exhibited the highest efficiency of the photoluminescence emission. The intensity of BN emission has been interpreted in terms of the interplay between the emission of intrinsic defects stabilized by carbon, carbon-related recombination centers, and the centers of non-radiative recombination caused by the presence of sassolite phases in the samples.