Light-emitting properties of BN synthesized by different techniques

Light-emitting properties of boron nitride powders of different morphologies grown using various techniques have been studied. All samples were hexagonal BN (h-BN), while the content of impurity phases varied considerably. The wide photoluminescence band in the visible range has been observed. h-BN...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2020
Автори: Rudko, G.Yu., Sartinska, L.L., Isaieva, O.F., Gule, E.G., Eren, T., Altay, E.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/215710
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Light-emitting properties of BN synthesized by different techniques / G.Yu. Rudko, L.L. Sartinska, O.F. Isaieva, E.G. Gule, T. Eren, E. Altay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 193-200. — Бібліогр.: 43 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Rudko, G.Yu.
Sartinska, L.L.
Isaieva, O.F.
Gule, E.G.
Eren, T.
Altay, E.
author_facet Rudko, G.Yu.
Sartinska, L.L.
Isaieva, O.F.
Gule, E.G.
Eren, T.
Altay, E.
citation_txt Light-emitting properties of BN synthesized by different techniques / G.Yu. Rudko, L.L. Sartinska, O.F. Isaieva, E.G. Gule, T. Eren, E. Altay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 193-200. — Бібліогр.: 43 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Light-emitting properties of boron nitride powders of different morphologies grown using various techniques have been studied. All samples were hexagonal BN (h-BN), while the content of impurity phases varied considerably. The wide photoluminescence band in the visible range has been observed. h-BN synthesized using the carbothermal reduction method exhibited the highest efficiency of the photoluminescence emission. The intensity of BN emission has been interpreted in terms of the interplay between the emission of intrinsic defects stabilized by carbon, carbon-related recombination centers, and the centers of non-radiative recombination caused by the presence of sassolite phases in the samples.
first_indexed 2026-03-29T01:03:45Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2026-03-29T01:03:45Z
publishDate 2020
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Rudko, G.Yu.
Sartinska, L.L.
Isaieva, O.F.
Gule, E.G.
Eren, T.
Altay, E.
2026-03-26T08:46:46Z
2020
Light-emitting properties of BN synthesized by different techniques / G.Yu. Rudko, L.L. Sartinska, O.F. Isaieva, E.G. Gule, T. Eren, E. Altay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 193-200. — Бібліогр.: 43 назв. — англ.
1560-8034
PACS: 78.55.-m, 78.55 Hx, 78.67.-n
https://nasplib.isofts.kiev.ua/handle/123456789/215710
https://doi.org/10.15407/spqeo23.02.193
Light-emitting properties of boron nitride powders of different morphologies grown using various techniques have been studied. All samples were hexagonal BN (h-BN), while the content of impurity phases varied considerably. The wide photoluminescence band in the visible range has been observed. h-BN synthesized using the carbothermal reduction method exhibited the highest efficiency of the photoluminescence emission. The intensity of BN emission has been interpreted in terms of the interplay between the emission of intrinsic defects stabilized by carbon, carbon-related recombination centers, and the centers of non-radiative recombination caused by the presence of sassolite phases in the samples.
The authors (G. Rudko, O. Isaieva, E. Gule) acknowledge financial support from the NAS of Ukraine, grant # 0116U002611.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Optics
Light-emitting properties of BN synthesized by different techniques
Article
published earlier
spellingShingle Light-emitting properties of BN synthesized by different techniques
Rudko, G.Yu.
Sartinska, L.L.
Isaieva, O.F.
Gule, E.G.
Eren, T.
Altay, E.
Optics
title Light-emitting properties of BN synthesized by different techniques
title_full Light-emitting properties of BN synthesized by different techniques
title_fullStr Light-emitting properties of BN synthesized by different techniques
title_full_unstemmed Light-emitting properties of BN synthesized by different techniques
title_short Light-emitting properties of BN synthesized by different techniques
title_sort light-emitting properties of bn synthesized by different techniques
topic Optics
topic_facet Optics
url https://nasplib.isofts.kiev.ua/handle/123456789/215710
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