Influence of microwave radiation on relaxation processes in silicon carbide
The methods of optical absorption spectroscopy and high-resolution diffractometry have been used to study the influence of microwaves on the characteristics of crystalline SiC. Being based on the X-ray analysis data, optical transmission, photoluminescence, and photoluminescence excitation spectra,...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2020 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2020
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215713 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of microwave radiation on relaxation processes in silicon carbide / Yu.Yu. Bacherikov, V.Yu. Goroneskul, O.Yo. Gudymenko, V.P. Kladko, O.F. Kolomys, I.M. Krishchenko, O.B. Okhrimenko, V.V. Strelchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 175-179. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The methods of optical absorption spectroscopy and high-resolution diffractometry have been used to study the influence of microwaves on the characteristics of crystalline SiC. Being based on the X-ray analysis data, optical transmission, photoluminescence, and photoluminescence excitation spectra, it has been shown that the microwave treatment leads to a change in the gradient of internal mechanical stresses and an increase in the migration capability of dislocations and, as a result, to the redistribution of recombination centers in the sample.
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| ISSN: | 1560-8034 |