Influence of microwave radiation on relaxation processes in silicon carbide
The methods of optical absorption spectroscopy and high-resolution diffractometry have been used to study the influence of microwaves on the characteristics of crystalline SiC. Being based on the X-ray analysis data, optical transmission, photoluminescence, and photoluminescence excitation spectra,...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2020 |
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2020
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215713 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of microwave radiation on relaxation processes in silicon carbide / Yu.Yu. Bacherikov, V.Yu. Goroneskul, O.Yo. Gudymenko, V.P. Kladko, O.F. Kolomys, I.M. Krishchenko, O.B. Okhrimenko, V.V. Strelchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 175-179. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860956299691294720 |
|---|---|
| author | Bacherikov, Yu.Yu. Goroneskul, V.Yu. Gudymenko, O.Yo. Kladko, V.P. Kolomys, O.F. Krishchenko, I.M. Okhrimenko, O.B. Strelchuk, V.V. |
| author_facet | Bacherikov, Yu.Yu. Goroneskul, V.Yu. Gudymenko, O.Yo. Kladko, V.P. Kolomys, O.F. Krishchenko, I.M. Okhrimenko, O.B. Strelchuk, V.V. |
| citation_txt | Influence of microwave radiation on relaxation processes in silicon carbide / Yu.Yu. Bacherikov, V.Yu. Goroneskul, O.Yo. Gudymenko, V.P. Kladko, O.F. Kolomys, I.M. Krishchenko, O.B. Okhrimenko, V.V. Strelchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 175-179. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The methods of optical absorption spectroscopy and high-resolution diffractometry have been used to study the influence of microwaves on the characteristics of crystalline SiC. Being based on the X-ray analysis data, optical transmission, photoluminescence, and photoluminescence excitation spectra, it has been shown that the microwave treatment leads to a change in the gradient of internal mechanical stresses and an increase in the migration capability of dislocations and, as a result, to the redistribution of recombination centers in the sample.
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| first_indexed | 2026-03-29T01:03:46Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215713 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-29T01:03:46Z |
| publishDate | 2020 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bacherikov, Yu.Yu. Goroneskul, V.Yu. Gudymenko, O.Yo. Kladko, V.P. Kolomys, O.F. Krishchenko, I.M. Okhrimenko, O.B. Strelchuk, V.V. 2026-03-26T08:48:02Z 2020 Influence of microwave radiation on relaxation processes in silicon carbide / Yu.Yu. Bacherikov, V.Yu. Goroneskul, O.Yo. Gudymenko, V.P. Kladko, O.F. Kolomys, I.M. Krishchenko, O.B. Okhrimenko, V.V. Strelchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 175-179. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 61.05.cp, 78.20.Ci, 78.55.-m, 78.70.Gq https://nasplib.isofts.kiev.ua/handle/123456789/215713 https://doi.org/10.15407/spqeo23.02.175 The methods of optical absorption spectroscopy and high-resolution diffractometry have been used to study the influence of microwaves on the characteristics of crystalline SiC. Being based on the X-ray analysis data, optical transmission, photoluminescence, and photoluminescence excitation spectra, it has been shown that the microwave treatment leads to a change in the gradient of internal mechanical stresses and an increase in the migration capability of dislocations and, as a result, to the redistribution of recombination centers in the sample. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Optics Influence of microwave radiation on relaxation processes in silicon carbide Article published earlier |
| spellingShingle | Influence of microwave radiation on relaxation processes in silicon carbide Bacherikov, Yu.Yu. Goroneskul, V.Yu. Gudymenko, O.Yo. Kladko, V.P. Kolomys, O.F. Krishchenko, I.M. Okhrimenko, O.B. Strelchuk, V.V. Optics |
| title | Influence of microwave radiation on relaxation processes in silicon carbide |
| title_full | Influence of microwave radiation on relaxation processes in silicon carbide |
| title_fullStr | Influence of microwave radiation on relaxation processes in silicon carbide |
| title_full_unstemmed | Influence of microwave radiation on relaxation processes in silicon carbide |
| title_short | Influence of microwave radiation on relaxation processes in silicon carbide |
| title_sort | influence of microwave radiation on relaxation processes in silicon carbide |
| topic | Optics |
| topic_facet | Optics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215713 |
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