Influence of microwave radiation on relaxation processes in silicon carbide

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2020
• Main Authors: Bacherikov, Yu.Yu., Goroneskul, V.Yu., Gudymenko, O.Yo., Kladko, V.P., Kolomys, O.F., Krishchenko, I.M., Okhrimenko, O.B., Strelchuk, V.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Subjects: Optics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215713
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Influence of microwave radiation on relaxation processes in silicon carbide / Yu.Yu. Bacherikov, V.Yu. Goroneskul, O.Yo. Gudymenko, V.P. Kladko, O.F. Kolomys, I.M. Krishchenko, O.B. Okhrimenko, V.V. Strelchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 175-179. — Бібліогр.: 15 назв. — англ.

The methods of optical absorption spectroscopy and high-resolution diffractometry have been used to study the influence of microwaves on the characteristics of crystalline SiC. Being based on the X-ray analysis data, optical transmission, photoluminescence, and photoluminescence excitation spectra,...