Influence of the quantum dots' bandgap and their dispersion on the loss of luminescent quanta

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2020
• ISSN: 1560-8034
• Hauptverfasser: Kulish, M.R., Kostylyov, V.P., Sachenko, A.V., Sokolovskyi, I.O., Shkrebtii, A.I.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Schlagworte: Hetero- and low-dimensional structures
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215716
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of the quantum dots' bandgap and their dispersion on the loss of luminescent quanta / M.R. Kulish, V.P. Kostylyov, A.V. Sachenko, I.O. Sokolovskyi, A.I. Shkrebtii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 155-159. — Бібліогр.: 5 назв. — англ.

The method for estimating the loss of luminescent quanta caused by reabsorption has been proposed. The method is based on the analysis of absorption and luminescence spectra of quantum dots (QDs) with different radii ↼ and dispersion of radius △↼. The loss was estimated for QDs of six semiconductor materials with different bulk bandgap g₀: CdS (g₀ = 2.42 eV), CdSe (g₀ = 1.74 eV), CdTe (g₀ = 1.56 eV), InP (g₀ = 1.34 eV), InAs (g₀ = 0.36 eV), and PbSe (g₀ = 0.27 eV). It has been ascertained that, by changing ↼ and △↼ , one can find the optimal values of these parameters, for which the losses of luminescent quanta are minimal.