Recombination statistics of non-equilibrium carriers in the model of a semiconductor with donor-acceptor pairs possessing variable recombination activity

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2020
• Main Authors: Leyderman, A.Yu., Uteniyazov, A.K., Nsanbaev, M.T.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Subjects: Semiconductor Physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215854
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Recombination statistics of non-equilibrium carriers in the model of a semiconductor with donor-acceptor pairs possessing variable recombination activity / A.Yu. Leyderman, A.K. Uteniyazov, M.T. Nsanbaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 3. — С. 290-293. — Бібліогр.: 6 назв. — англ.

The recombination rate of non-equilibrium carriers has been calculated for the model of the semiconductor with donor-acceptor pairs, the recombination activity of which decreases during excitation. It has been shown that, even at a very low inertia of intracomplex exchange, this process can lead to...