Recombination statistics of non-equilibrium carriers in the model of a semiconductor with donor-acceptor pairs possessing variable recombination activity

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2020
• Автори: Leyderman, A.Yu., Uteniyazov, A.K., Nsanbaev, M.T.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Теми: Semiconductor Physics
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/215854
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Recombination statistics of non-equilibrium carriers in the model of a semiconductor with donor-acceptor pairs possessing variable recombination activity / A.Yu. Leyderman, A.K. Uteniyazov, M.T. Nsanbaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 3. — С. 290-293. — Бібліогр.: 6 назв. — англ.

The recombination rate of non-equilibrium carriers has been calculated for the model of the semiconductor with donor-acceptor pairs, the recombination activity of which decreases during excitation. It has been shown that, even at a very low inertia of intracomplex exchange, this process can lead to...