Latreche, A. (2020). Determination of the temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationLatreche, A. "Determination of the Temperature Dependence of Electron Effective Mass in 4H-SiC from Reverse Current-voltage Characteristics of 4H-SiC Schottky Barrier Diodes." Semiconductor Physics Quantum Electronics & Optoelectronics 2020.
MLA (8th ed.) CitationLatreche, A. "Determination of the Temperature Dependence of Electron Effective Mass in 4H-SiC from Reverse Current-voltage Characteristics of 4H-SiC Schottky Barrier Diodes." Semiconductor Physics Quantum Electronics & Optoelectronics, 2020.