Determination of the temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes
The current-voltage-temperature profiling method has been used with 4H-SiC Schottky barrier diodes and presented for determining the electron effective mass in 4H-SiC. The extracted electron effective mass has been found to be temperature dependent; it decreases with increasing temperature. Moreove...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2020 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2020
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215857 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Determination of the temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes / A. Latreche // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 3. — С. 271-275. — Бібліогр.: 27 назв. — англ. |