Determination of the temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2020
• 1. Verfasser: Latreche, A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Schlagworte: Semiconductor Physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215857
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Determination of the temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes / A. Latreche // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 3. — С. 271-275. — Бібліогр.: 27 назв. — англ.

The current-voltage-temperature profiling method has been used with 4H-SiC Schottky barrier diodes and presented for determining the electron effective mass in 4H-SiC. The extracted electron effective mass has been found to be temperature dependent; it decreases with increasing temperature. Moreove...