The advancement of silicon-on-insulator (SOI) devices and their basic properties

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2020
• Hauptverfasser: Rudenko, T.E., Nazarov, A.N., Lysenko, V.S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Schlagworte: Physics of microelectronic devices
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215861
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The advancement of silicon-on-insulator (SOI) devices and their basic properties / T.E. Rudenko, A.N. Nazarov, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 3. — С. 227-252. — Бібліогр.: 171 назв. — англ.

Silicon-on-insulator (SOI) is the most promising present-day silicon technology. The use of SOI provides significant benefits over traditional bulk silicon technology in the fabrication of many integrated circuits (ICs), and in particular, complementary metal-oxide-semiconductor (CMOS) ICs. It also...