The advancement of silicon-on-insulator (SOI) devices and their basic properties
Silicon-on-insulator (SOI) is the most promising present-day silicon technology. The use of SOI provides significant benefits over traditional bulk silicon technology in the fabrication of many integrated circuits (ICs), and in particular, complementary metal-oxide-semiconductor (CMOS) ICs. It also...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2020 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2020
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215861 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The advancement of silicon-on-insulator (SOI) devices and their basic properties / T.E. Rudenko, A.N. Nazarov, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 3. — С. 227-252. — Бібліогр.: 171 назв. — англ. |
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